Menu
EnglishEnglish
RFQs/Order
0RFQs/Order

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

NSBC114EPDXV6T5G
ON Semiconductor

NSBC114EPDXV6T5G

part stock: 179087

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

To Wishlist
MUN5331DW1T1G
ON Semiconductor

MUN5331DW1T1G

part stock: 1460

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V,

To Wishlist
NSBC113EPDXV6T1
ON Semiconductor

NSBC113EPDXV6T1

part stock: 1467

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

To Wishlist
NSBC123JDP6T5G
ON Semiconductor

NSBC123JDP6T5G

part stock: 161656

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist
NSB1706DMW5T1
ON Semiconductor

NSB1706DMW5T1

part stock: 1530

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist
MUN5333DW1T1
ON Semiconductor

MUN5333DW1T1

part stock: 1513

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist
NSBC144EDXV6T1G
ON Semiconductor

NSBC144EDXV6T1G

part stock: 157107

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist
MUN5235DW1T1
ON Semiconductor

MUN5235DW1T1

part stock: 1487

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist
NSBC123TPDP6T5G
ON Semiconductor

NSBC123TPDP6T5G

part stock: 144483

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

To Wishlist
MUN5213DW1T3G
ON Semiconductor

MUN5213DW1T3G

part stock: 114310

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist
MUN5212DW1T1G
ON Semiconductor

MUN5212DW1T1G

part stock: 183961

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

To Wishlist
RN4902FE(TE85L,F)
Toshiba Semiconductor and Storage

RN4902FE(TE85L,F)

part stock: 1489

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

To Wishlist
RN1908(T5L,F,T)
Toshiba Semiconductor and Storage

RN1908(T5L,F,T)

part stock: 5402

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

To Wishlist
RN2502(TE85L,F)
Toshiba Semiconductor and Storage

RN2502(TE85L,F)

part stock: 9911

Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

To Wishlist
RN2910(T5L,F,T)
Toshiba Semiconductor and Storage

RN2910(T5L,F,T)

part stock: 1510

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

To Wishlist
RN2706JE(TE85L,F)
Toshiba Semiconductor and Storage

RN2706JE(TE85L,F)

part stock: 185153

Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

To Wishlist
RN4986(T5L,F,T)
Toshiba Semiconductor and Storage

RN4986(T5L,F,T)

part stock: 1620

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

To Wishlist
RN1968FE(TE85L,F)
Toshiba Semiconductor and Storage

RN1968FE(TE85L,F)

part stock: 3218

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

To Wishlist
UP04213G0L
Panasonic Electronic Components

UP04213G0L

part stock: 104699

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist
DMG964060R
Panasonic Electronic Components

DMG964060R

part stock: 139941

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

To Wishlist
DMG264040R
Panasonic Electronic Components

DMG264040R

part stock: 138992

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist
XP0111300L
Panasonic Electronic Components

XP0111300L

part stock: 1431

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist
DMA264050R
Panasonic Electronic Components

DMA264050R

part stock: 138706

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

To Wishlist
DMC564040R
Panasonic Electronic Components

DMC564040R

part stock: 131200

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist
NP062AN00A
Panasonic Electronic Components

NP062AN00A

part stock: 191416

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 80mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist
XN0421300L
Panasonic Electronic Components

XN0421300L

part stock: 1434

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist
DMA261010R
Panasonic Electronic Components

DMA261010R

part stock: 177827

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

To Wishlist
DMC261020R
Panasonic Electronic Components

DMC261020R

part stock: 168460

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

To Wishlist
UP0431500L
Panasonic Electronic Components

UP0431500L

part stock: 1397

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

To Wishlist
PBLS4001D,115
Nexperia USA Inc.

PBLS4001D,115

part stock: 174111

Transistor Type: 1 NPN Pre-Biased, 1 PNP, Current - Collector (Ic) (Max): 100mA, 700mA, Voltage - Collector Emitter Breakdown (Max): 50V, 40V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V / 300 @ 100mA, 5V,

To Wishlist
PUMD6/ZLF
Nexperia USA Inc.

PUMD6/ZLF

part stock: 1474

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V,

To Wishlist
PBLS2003D,115
Nexperia USA Inc.

PBLS2003D,115

part stock: 158008

Transistor Type: 1 NPN Pre-Biased, 1 PNP, Current - Collector (Ic) (Max): 100mA, 1A, Voltage - Collector Emitter Breakdown (Max): 50V, 20V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 220 @ 500mA, 2V,

To Wishlist
DDA123JU-7-F
Diodes Incorporated

DDA123JU-7-F

part stock: 167747

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

To Wishlist
FMA7AT148
Rohm Semiconductor

FMA7AT148

part stock: 193045

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

To Wishlist
UMC3NTR
Rohm Semiconductor

UMC3NTR

part stock: 111007

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

To Wishlist
UMG4NTR
Rohm Semiconductor

UMG4NTR

part stock: 131758

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

To Wishlist