Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 6V, Voltage - Offset (Vt): 1.6V, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 50µA,
Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 6V, Voltage - Offset (Vt): 600mV, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 25µA,
Voltage: 40V, Power Dissipation (Max): 167mW, Voltage - Output: 6V, Voltage - Offset (Vt): 600mV, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 25µA,
Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 600mV, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 25µA,
Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 600mV, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 25µA,
Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 1.6V, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 50µA,
Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 600mV, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 25µA,
Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 1.6V, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 50µA,
Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 600mV, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 25µA,
Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 1.6V, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 50µA,
Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 600mV, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 25µA,
Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 1.6V, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 50µA,
Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 600mV, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 25µA,
Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 1.6V, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 50µA,