Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Discrete Semiconductor Products | 42

MUN5216DW1T1

part stock: 1438

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

To Wishlist

ON Semiconductor

NSBC143ZPDXV6T1G

part stock: 154023

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist

ON Semiconductor

NSBC123JDXV6T5

part stock: 1465

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist

ON Semiconductor

NSVB124XPDXV6T1G

part stock: 133175

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist

ON Semiconductor

NSBA113EDXV6T1G

part stock: 168681

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

To Wishlist

ON Semiconductor

MUN5113DW1T1G

part stock: 163385

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist

ON Semiconductor

EMC5DXV5T1

part stock: 3198

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V,

To Wishlist

ON Semiconductor

SMUN5315DW1T1G

part stock: 151022

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist

ON Semiconductor

MUN5111DW1T1G

part stock: 182502

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

To Wishlist

ON Semiconductor

NSBC114YDXV6T5G

part stock: 152242

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist

Toshiba Semiconductor and Storage

RN2906,LF

part stock: 138883

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

RN2908(T5L,F,T)

part stock: 1489

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

RN2901(T5L,F,T)

part stock: 1507

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

RN1970FE(TE85L,F)

part stock: 1480

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

RN2603(TE85L,F)

part stock: 181191

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

RN4903(T5L,F,T)

part stock: 1463

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

RN2968FE(TE85L,F)

part stock: 1523

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

To Wishlist

Diodes Incorporated

DDA144EK-7-F

part stock: 124106

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

To Wishlist

Diodes Incorporated

DDA124EK-7-F

part stock: 116873

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V,

To Wishlist

Diodes Incorporated

DDA114YU-7

part stock: 1386

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V,

To Wishlist

Rohm Semiconductor

IMB4AT110

part stock: 116363

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

To Wishlist

Rohm Semiconductor

UMF8NTR

part stock: 111347

Transistor Type: 1 NPN Pre-Biased, 1 NPN, Current - Collector (Ic) (Max): 100mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, 15V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 270 @ 10mA, 2V,

To Wishlist

Rohm Semiconductor

FMG5AT148

part stock: 191530

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

To Wishlist

Rohm Semiconductor

UMD6NTR

part stock: 125967

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

To Wishlist

Panasonic Electronic Components

XP0621000L

part stock: 1473

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

To Wishlist

Panasonic Electronic Components

DMG264020R

part stock: 139566

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

To Wishlist

Panasonic Electronic Components

XN0111M00L

part stock: 1478

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist

Panasonic Electronic Components

XP0421M00L

part stock: 1422

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist

Panasonic Electronic Components

NP0G3A000A

part stock: 1454

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 80mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

To Wishlist

Nexperia USA Inc.

PBLS6004D,115

part stock: 100158

Transistor Type: 1 NPN Pre-Biased, 1 PNP, Current - Collector (Ic) (Max): 100mA, 700mA, Voltage - Collector Emitter Breakdown (Max): 50V, 60V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 150 @ 500mA, 5V,

To Wishlist

Nexperia USA Inc.

PIMN31,115

part stock: 149516

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V,

To Wishlist

Nexperia USA Inc.

PEMH9,115

part stock: 174446

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V,

To Wishlist

Nexperia USA Inc.

PUMD17,115

part stock: 141367

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V,

To Wishlist

Nexperia USA Inc.

PUMB2,115

part stock: 142176

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V,

To Wishlist

NXP USA Inc.

PBLS4001V,115

part stock: 1384

Transistor Type: 1 NPN Pre-Biased, 1 PNP, Current - Collector (Ic) (Max): 100mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, 40V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V / 150 @ 100mA, 2V,

To Wishlist

NXP USA Inc.

PBLS4002V,115

part stock: 1498

Transistor Type: 1 NPN Pre-Biased, 1 PNP, Current - Collector (Ic) (Max): 100mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, 40V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 100mA, 2V,

To Wishlist