Transistors - FETs, MOSFETs - Single

2N7227

part stock: 1694

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 400V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 315 mOhm @ 9A, 10V,

2N7225

part stock: 1611

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 17A, 10V,

2N7224U

part stock: 1683

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 81 mOhm @ 34A, 10V,

2N7224

part stock: 1652

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 70 mOhm @ 21A, 10V,

2N6901

part stock: 1637

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 1.07A, 5V,

2N7236

part stock: 1547

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 11A, 10V,

2SK2035(T5L,F,T)

part stock: 1665

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 2.5V, Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 2.5V,

2SK1829TE85LF

part stock: 1614

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 50mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 2.5V, Rds On (Max) @ Id, Vgs: 40 Ohm @ 10mA, 2.5V,

2SK3309(TE24L,Q)

part stock: 1621

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 450V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 650 mOhm @ 5A, 10V,

2SK2967(F)

part stock: 6205

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 250V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V,

2SK3385(0)-Z-E1-AZ

part stock: 1571

2SK4151TZ-E

part stock: 1558

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 150V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Rds On (Max) @ Id, Vgs: 1.95 Ohm @ 500mA, 4V,

2SK4093TZ-E

part stock: 1571

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 250V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 500mA, 4V,

2SK4150TZ-E

part stock: 1515

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 250V, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Rds On (Max) @ Id, Vgs: 5.7 Ohm @ 200mA, 4V,

2SK2225-E

part stock: 6158

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 1500V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Drive Voltage (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 12 Ohm @ 1A, 15V,

2SK1342-E

part stock: 1570

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V,

2SK1775-E

part stock: 1594

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V,

2SK1340-E

part stock: 1567

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 3A, 10V,

2SK1341-E

part stock: 1594

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 3A, 10V,

2SK1339-E

part stock: 1582

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 7 Ohm @ 1.5A, 10V,

2SK302200L

part stock: 1551

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V,

2SK326800L

part stock: 1465

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 12A, 10V,

2SK303000L

part stock: 84713

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 230 mOhm @ 4A, 10V,

2SK302500L

part stock: 40869

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V,

2N7002-E3

part stock: 1534

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 115mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

2N7002-D87Z

part stock: 1492

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 115mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

2SK4198FS

part stock: 5624

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.34 Ohm @ 2.5A, 10V,

2SK4197FS

part stock: 1470

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.25 Ohm @ 1.8A, 10V,

2SK536-TB-E

part stock: 129781

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 20 Ohm @ 10mA, 10V,

2N7639-GA

part stock: 318

Technology: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc) (155°C), Rds On (Max) @ Id, Vgs: 105 mOhm @ 15A,

2N7638-GA

part stock: 339

Technology: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (158°C), Rds On (Max) @ Id, Vgs: 170 mOhm @ 8A,

2N7637-GA

part stock: 369

Technology: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc) (165°C), Rds On (Max) @ Id, Vgs: 170 mOhm @ 7A,

2N7636-GA

part stock: 431

Technology: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C), Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A,

2N7635-GA

part stock: 376

Technology: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C), Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A,

2N7002-G

part stock: 134471

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 115mA (Tj), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

2N7002-HF

part stock: 175303

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V,