| Type | Description |
| Part Status | Obsolete |
|---|---|
| FET Type | - |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) (155°C) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | 105 mOhm @ 15A |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1534pF @ 35V |
| FET Feature | - |
| Power Dissipation (Max) | 172W (Tc) |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-257 |
| Package / Case | TO-257-3 |
| RoHS Status | RoHS Compliant |
|---|---|
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Lifecycle Status | Obsolete / End of life |
| Stock Category | Available stock |
