Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products | 100

2SK4066-E

part stock: 1172

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V,

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ON Semiconductor

2SK4066-DL-E

part stock: 1110

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V,

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ON Semiconductor

2SK4043LS

part stock: 1127

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 4V,

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ON Semiconductor

2SK4065-DL-E

part stock: 1115

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 75V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V,

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ON Semiconductor

2SK3748

part stock: 1129

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 1500V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 7 Ohm @ 2A, 10V,

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ON Semiconductor

2SK3747-MG8

part stock: 1091

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 1500V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V,

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ON Semiconductor

2SK3746

part stock: 1143

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 1500V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V,

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ON Semiconductor

2SK3747

part stock: 1187

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 1500V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V,

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ON Semiconductor

2SK3704

part stock: 1118

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 14 mOhm @ 23A, 10V,

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ON Semiconductor

2SK3745LS

part stock: 1162

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 1500V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V,

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ON Semiconductor

2SK3703

part stock: 6201

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 26 mOhm @ 15A, 10V,

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ON Semiconductor

2SJ652-RA11

part stock: 1181

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 38 mOhm @ 14A, 10V,

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ON Semiconductor

2SK4125

part stock: 829

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 610 mOhm @ 7A, 10V,

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ON Semiconductor

2SJ656

part stock: 835

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 75.5 mOhm @ 9A, 10V,

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ON Semiconductor

2SK4124

part stock: 818

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V,

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ON Semiconductor

2SK4171

part stock: 814

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 50A, 10V,

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ON Semiconductor

2SK4085LS

part stock: 852

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V,

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ON Semiconductor

2SK3708

part stock: 838

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 33 mOhm @ 15A, 10V,

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ON Semiconductor

2SK3707

part stock: 828

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 60 mOhm @ 10A, 10V,

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Vishay Siliconix

2N7002E

part stock: 125033

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 240mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V,

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NXP USA Inc.

2N7002K,215

part stock: 892

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 340mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 500mA, 10V,

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Infineon Technologies

2N7002L6327HTSA1

part stock: 723

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V,

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Toshiba Semiconductor and Storage

2SK4021(Q)

part stock: 783

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 250V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V,

To Wishlist

Toshiba Semiconductor and Storage

2SK4017(Q)

part stock: 100330

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.5A, 10V,

To Wishlist

Toshiba Semiconductor and Storage

2SK4016(Q)

part stock: 6095

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.5A, 10V,

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Toshiba Semiconductor and Storage

2SK3868(Q,M)

part stock: 709

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 2.5A, 10V,

To Wishlist

Toshiba Semiconductor and Storage

2SK3906(Q)

part stock: 711

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 330 mOhm @ 10A, 10V,

To Wishlist

Toshiba Semiconductor and Storage

2SK3844(Q)

part stock: 756

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 23A, 10V,

To Wishlist

Toshiba Semiconductor and Storage

2SK3662(F)

part stock: 712

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 18A, 10V,

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Toshiba Semiconductor and Storage

2SK3462(TE16L1,NQ)

part stock: 761

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 250V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 1.5A, 10V,

To Wishlist

Toshiba Semiconductor and Storage

2SK3466(TE24L,Q)

part stock: 730

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 5A, 10V,

To Wishlist

Toshiba Semiconductor and Storage

2SK3388(TE24L,Q)

part stock: 727

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 250V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V,

To Wishlist

Toshiba Semiconductor and Storage

2SK3403(Q)

part stock: 759

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 450V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V,

To Wishlist

Toshiba Semiconductor and Storage

2SK3313(Q)

part stock: 769

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 620 mOhm @ 6A, 10V,

To Wishlist

Toshiba Semiconductor and Storage

2SK3342(TE16L1,NQ)

part stock: 768

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 250V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V,

To Wishlist

Toshiba Semiconductor and Storage

2SK2883(TE24L,Q)

part stock: 752

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 800V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.5A, 10V,

To Wishlist