Menu
EnglishEnglish
RFQs/Order
0RFQs/Order

Transistors - Bipolar (BJT) - Single

  • Home
  •  
  • Transistors - Bipolar (BJT) - Single
2SD2695(T6CNO,A,F)
Toshiba Semiconductor and Storage

2SD2695(T6CNO,A,F)

part stock: 7027

Transistor Type: NPN, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

Wishlist
2SD2695(T6CANO,F,M
Toshiba Semiconductor and Storage

2SD2695(T6CANO,F,M

part stock: 7067

Transistor Type: NPN, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

Wishlist
2SD2695(T6CANO,A,F
Toshiba Semiconductor and Storage

2SD2695(T6CANO,A,F

part stock: 6998

Transistor Type: NPN, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

Wishlist
2SD2257,NIKKIQ(J
Toshiba Semiconductor and Storage

2SD2257,NIKKIQ(J

part stock: 7056

Transistor Type: NPN, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V,

Wishlist
2SD2257,Q(J
Toshiba Semiconductor and Storage

2SD2257,Q(J

part stock: 6993

Transistor Type: NPN, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V,

Wishlist
2SD2257(Q,M)
Toshiba Semiconductor and Storage

2SD2257(Q,M)

part stock: 7066

Transistor Type: NPN, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V,

Wishlist
2SD2257,KEHINQ(J
Toshiba Semiconductor and Storage

2SD2257,KEHINQ(J

part stock: 6789

Transistor Type: NPN, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V,

Wishlist
2SD2257(CANO,A,Q)
Toshiba Semiconductor and Storage

2SD2257(CANO,A,Q)

part stock: 6792

Transistor Type: NPN, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V,

Wishlist
2SD2257(CANO,Q,M)
Toshiba Semiconductor and Storage

2SD2257(CANO,Q,M)

part stock: 6778

Transistor Type: NPN, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V,

Wishlist
2SD2206A(T6SEP,F,M
Toshiba Semiconductor and Storage

2SD2206A(T6SEP,F,M

part stock: 6989

Transistor Type: NPN, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 120V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

Wishlist
2SD2206,T6F(J
Toshiba Semiconductor and Storage

2SD2206,T6F(J

part stock: 7064

Transistor Type: NPN, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

Wishlist
2SD2206(TE6,F,M)
Toshiba Semiconductor and Storage

2SD2206(TE6,F,M)

part stock: 7008

Transistor Type: NPN, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

Wishlist
2SD2206(T6CNO,A,F)
Toshiba Semiconductor and Storage

2SD2206(T6CNO,A,F)

part stock: 7045

Transistor Type: NPN, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

Wishlist
2SD2206(T6CANO,F,M
Toshiba Semiconductor and Storage

2SD2206(T6CANO,F,M

part stock: 7037

Transistor Type: NPN, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

Wishlist
2SD2129,ALPSQ(M
Toshiba Semiconductor and Storage

2SD2129,ALPSQ(M

part stock: 7039

Transistor Type: NPN, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V,

Wishlist
2SD2129,LS4ALPSQ(M
Toshiba Semiconductor and Storage

2SD2129,LS4ALPSQ(M

part stock: 7003

Transistor Type: NPN, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V,

Wishlist
2SC6042,T2WNLQ(J
Toshiba Semiconductor and Storage

2SC6042,T2WNLQ(J

part stock: 7001

Transistor Type: NPN, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 375V, Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Wishlist
2SC6139,T2F(M
Toshiba Semiconductor and Storage

2SC6139,T2F(M

part stock: 6717

Transistor Type: NPN, Current - Collector (Ic) (Max): 1.5A, Voltage - Collector Emitter Breakdown (Max): 160V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V,

Wishlist
2SC6040,T2Q(J
Toshiba Semiconductor and Storage

2SC6040,T2Q(J

part stock: 7021

Transistor Type: NPN, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 800V, Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V,

Wishlist
2SC6042,T2HOSH1Q(J
Toshiba Semiconductor and Storage

2SC6042,T2HOSH1Q(J

part stock: 7019

Transistor Type: NPN, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 375V, Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Wishlist
2SC6010(T2MITUM,FM
Toshiba Semiconductor and Storage

2SC6010(T2MITUM,FM

part stock: 6714

Transistor Type: NPN, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 600V, Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Wishlist
2SC6040(TPF2,Q,M)
Toshiba Semiconductor and Storage

2SC6040(TPF2,Q,M)

part stock: 7015

Transistor Type: NPN, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 800V, Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V,

Wishlist
2SC5930(TPF2,F,M)
Toshiba Semiconductor and Storage

2SC5930(TPF2,F,M)

part stock: 6994

Transistor Type: NPN, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 600V, Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 5V,

Wishlist
2SC5930(T2MITUM,FM
Toshiba Semiconductor and Storage

2SC5930(T2MITUM,FM

part stock: 6971

Transistor Type: NPN, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 600V, Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 5V,

Wishlist
2SC5201,T6F(J
Toshiba Semiconductor and Storage

2SC5201,T6F(J

part stock: 6716

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 600V, Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V,

Wishlist
2SC5201,T6MURAF(J
Toshiba Semiconductor and Storage

2SC5201,T6MURAF(J

part stock: 7019

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 600V, Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V,

Wishlist
2SC5201,F(J
Toshiba Semiconductor and Storage

2SC5201,F(J

part stock: 6724

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 600V, Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V,

Wishlist
2SC5201(TE6,F,M)
Toshiba Semiconductor and Storage

2SC5201(TE6,F,M)

part stock: 6968

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 600V, Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V,

Wishlist
2SC5172(YAZK,Q,M)
Toshiba Semiconductor and Storage

2SC5172(YAZK,Q,M)

part stock: 7006

Transistor Type: NPN, Current - Collector (Ic) (Max): 5A, Voltage - Collector Emitter Breakdown (Max): 400V, Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 2A, Current - Collector Cutoff (Max): 20µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V,

Wishlist
2SC5201(T6MURATAFM
Toshiba Semiconductor and Storage

2SC5201(T6MURATAFM

part stock: 7026

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 600V, Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V,

Wishlist
2SC5171,Q(J
Toshiba Semiconductor and Storage

2SC5171,Q(J

part stock: 6967

Transistor Type: NPN, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 180V, Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A, Current - Collector Cutoff (Max): 5µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Wishlist
2SC5171,ONKQ(J
Toshiba Semiconductor and Storage

2SC5171,ONKQ(J

part stock: 6979

Transistor Type: NPN, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 180V, Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A, Current - Collector Cutoff (Max): 5µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Wishlist
2SC5171(ONK,Q,M)
Toshiba Semiconductor and Storage

2SC5171(ONK,Q,M)

part stock: 6992

Transistor Type: NPN, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 180V, Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A, Current - Collector Cutoff (Max): 5µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Wishlist
2SC5171,MATUDQ(J
Toshiba Semiconductor and Storage

2SC5171,MATUDQ(J

part stock: 7059

Transistor Type: NPN, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 180V, Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A, Current - Collector Cutoff (Max): 5µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Wishlist
2SC5171(LBS2MATQ,M
Toshiba Semiconductor and Storage

2SC5171(LBS2MATQ,M

part stock: 6988

Transistor Type: NPN, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 180V, Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A, Current - Collector Cutoff (Max): 5µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Wishlist
2SC4935-Y,Q(J
Toshiba Semiconductor and Storage

2SC4935-Y,Q(J

part stock: 7005

Transistor Type: NPN, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Wishlist