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Transistors - FETs, MOSFETs - Arrays

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TPCL4202(TE85L,F)
Toshiba Semiconductor and Storage

TPCL4202(TE85L,F)

part stock: 2949

FET Type: 2 N-Channel (Half Bridge), FET Feature: Standard, Vgs(th) (Max) @ Id: 1.2V @ 200µA,

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TPCF8304(TE85L,F,M
Toshiba Semiconductor and Storage

TPCF8304(TE85L,F,M

part stock: 2938

FET Type: 2 P-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.2A, Rds On (Max) @ Id, Vgs: 72 mOhm @ 1.6A, 10V, Vgs(th) (Max) @ Id: 1.2V @ 1mA,

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SSM6L13TU(T5L,F,T)
Toshiba Semiconductor and Storage

SSM6L13TU(T5L,F,T)

part stock: 2912

FET Type: N and P-Channel, FET Feature: Logic Level Gate, 1.8V Drive, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Rds On (Max) @ Id, Vgs: 143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V, Vgs(th) (Max) @ Id: 1V @ 1mA,

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SSM6N48FU,RF(D
Toshiba Semiconductor and Storage

SSM6N48FU,RF(D

part stock: 2967

FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, 2.5V Drive, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs(th) (Max) @ Id: 1.5V @ 100µA,

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SSM6N68NU,LF
Toshiba Semiconductor and Storage

SSM6N68NU,LF

part stock: 16268

FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, 1.8V Drive, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 84 mOhm @ 2A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 1mA,

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SSM6N35AFU,LF
Toshiba Semiconductor and Storage

SSM6N35AFU,LF

part stock: 9923

FET Type: 2 N-Channel (Dual), FET Feature: Standard, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 100µA,

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SSM6N42FE(TE85L,F)
Toshiba Semiconductor and Storage

SSM6N42FE(TE85L,F)

part stock: 2976

FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA, Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 1mA,

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SSM6N815R,LF
Toshiba Semiconductor and Storage

SSM6N815R,LF

part stock: 9939

FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, 4V Drive, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 103 mOhm @ 2A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 100µA,

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SSM6L35FE,LM
Toshiba Semiconductor and Storage

SSM6L35FE,LM

part stock: 172252

FET Type: N and P-Channel, FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA, Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V, Vgs(th) (Max) @ Id: 1V @ 1mA,

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SSM6N67NU,LF
Toshiba Semiconductor and Storage

SSM6N67NU,LF

part stock: 9963

FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, 1.8V Drive, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 39.1 mOhm @ 2A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 1mA,

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SSM6N35AFE,LF
Toshiba Semiconductor and Storage

SSM6N35AFE,LF

part stock: 13256

FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, 1.2V Drive, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 100µA,

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SSM6P35FE,LM
Toshiba Semiconductor and Storage

SSM6P35FE,LM

part stock: 173905

FET Type: 2 P-Channel (Dual), FET Feature: Standard, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 100mA, Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V, Vgs(th) (Max) @ Id: 1V @ 1mA,

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SSM6P15FE(TE85L,F)
Toshiba Semiconductor and Storage

SSM6P15FE(TE85L,F)

part stock: 13232

FET Type: 2 P-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 100mA, Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs(th) (Max) @ Id: 1.7V @ 100µA,

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SSM6N37CTD(TPL3)
Toshiba Semiconductor and Storage

SSM6N37CTD(TPL3)

part stock: 2957

FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 250mA, Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 1mA,

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SSM6P41FE(TE85L,F)
Toshiba Semiconductor and Storage

SSM6P41FE(TE85L,F)

part stock: 13283

FET Type: 2 P-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 720mA, Rds On (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 1mA,

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TPC8405(TE12L,Q,M)
Toshiba Semiconductor and Storage

TPC8405(TE12L,Q,M)

part stock: 3098

FET Type: N and P-Channel, FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A, Rds On (Max) @ Id, Vgs: 26 mOhm @ 3A, 10V, Vgs(th) (Max) @ Id: 2V @ 1mA,

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SSM6N357R,LF
Toshiba Semiconductor and Storage

SSM6N357R,LF

part stock: 16211

FET Type: 2 N-Channel (Dual), FET Feature: Standard, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V, Vgs(th) (Max) @ Id: 2V @ 1mA,

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SSM6P35FE(TE85L,F)
Toshiba Semiconductor and Storage

SSM6P35FE(TE85L,F)

part stock: 121978

FET Type: 2 P-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 100mA, Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V, Vgs(th) (Max) @ Id: 1V @ 1mA,

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SSM6L35FU(TE85L,F)
Toshiba Semiconductor and Storage

SSM6L35FU(TE85L,F)

part stock: 156233

FET Type: N and P-Channel, FET Feature: Logic Level Gate, 1.2V Drive, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA, Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V, Vgs(th) (Max) @ Id: 1V @ 1mA,

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SSM6L61NU,LF
Toshiba Semiconductor and Storage

SSM6L61NU,LF

part stock: 154751

FET Type: N and P-Channel, FET Feature: Standard, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A,

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SSM6N48FU,RF
Toshiba Semiconductor and Storage

SSM6N48FU,RF

part stock: 3013

FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 100mA, Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs(th) (Max) @ Id: 1.5V @ 100µA,

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SSM6N7002BFU,LF
Toshiba Semiconductor and Storage

SSM6N7002BFU,LF

part stock: 154781

FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 200mA, Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs(th) (Max) @ Id: 3.1V @ 250µA,

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SSM6N61NU,LF
Toshiba Semiconductor and Storage

SSM6N61NU,LF

part stock: 117701

FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, 1.5V Drive, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A, Rds On (Max) @ Id, Vgs: 33 mOhm @ 4A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 1mA,

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SSM6P49NU,LF
Toshiba Semiconductor and Storage

SSM6P49NU,LF

part stock: 154268

FET Type: 2 P-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V, Vgs(th) (Max) @ Id: 1.2V @ 1mA,

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SSM6N16FUTE85LF
Toshiba Semiconductor and Storage

SSM6N16FUTE85LF

part stock: 9999

FET Type: 2 N-Channel (Dual), FET Feature: Standard, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 100mA, Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V, Vgs(th) (Max) @ Id: 1.1V @ 100µA,

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SSM6L36FE,LM
Toshiba Semiconductor and Storage

SSM6L36FE,LM

part stock: 107404

FET Type: N and P-Channel, FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA, Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V, Vgs(th) (Max) @ Id: 1V @ 1mA,

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TPCP8203(TE85L,F)
Toshiba Semiconductor and Storage

TPCP8203(TE85L,F)

part stock: 2780

FET Type: 2 N-Channel (Dual), FET Feature: Standard, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 4.7A, Vgs(th) (Max) @ Id: 2.5V @ 1mA,

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SSM6N7002BFE(T5L,F
Toshiba Semiconductor and Storage

SSM6N7002BFE(T5L,F

part stock: 2844

FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 200mA, Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs(th) (Max) @ Id: 3.1V @ 250µA,

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TPC8211(TE12L,Q,M)
Toshiba Semiconductor and Storage

TPC8211(TE12L,Q,M)

part stock: 2801

FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.5A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 3A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA,

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TPC8213-H(TE12LQ,M
Toshiba Semiconductor and Storage

TPC8213-H(TE12LQ,M

part stock: 2813

FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V, Vgs(th) (Max) @ Id: 2.3V @ 1mA,

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TPC8208(TE12L,Q)
Toshiba Semiconductor and Storage

TPC8208(TE12L,Q)

part stock: 2694

FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4V, Vgs(th) (Max) @ Id: 1.2V @ 200µA,

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TPCF8201(TE85L,F,M
Toshiba Semiconductor and Storage

TPCF8201(TE85L,F,M

part stock: 2756

FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3A, Rds On (Max) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 200µA,

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TPC8212-H(TE12LQ,M
Toshiba Semiconductor and Storage

TPC8212-H(TE12LQ,M

part stock: 2781

FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 3A, 10V, Vgs(th) (Max) @ Id: 2.3V @ 1mA,

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TPCP8401(TE85L,F)
Toshiba Semiconductor and Storage

TPCP8401(TE85L,F)

part stock: 3345

FET Type: N and P-Channel, FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, 12V, Current - Continuous Drain (Id) @ 25°C: 100mA, 5.5A, Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V, Vgs(th) (Max) @ Id: 1.1V @ 100µA,

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TPC8208(TE12L,Q,M)
Toshiba Semiconductor and Storage

TPC8208(TE12L,Q,M)

part stock: 2829

FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4V, Vgs(th) (Max) @ Id: 1.2V @ 200µA,

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TPC8207(TE12L)
Toshiba Semiconductor and Storage

TPC8207(TE12L)

part stock: 2650

FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 4.8A, 4V, Vgs(th) (Max) @ Id: 1.2V @ 200µA,

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