Transistors - FETs, MOSFETs - Single

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Transistors - FETs, MOSFETs - Single

Toshiba Semiconductor and Storage

SSM6K202FE,LF

part stock: 167951

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 4V,

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TPCA8010-H(TE12LQM

Toshiba Semiconductor and Storage

TPCA8010-H(TE12LQM

part stock: 643

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 450 mOhm @ 2.7A, 10V,

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TPC8042(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8042(TE12L,Q,M)

part stock: 758

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 9A, 10V,

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TPC8113(TE12L,Q)

Toshiba Semiconductor and Storage

TPC8113(TE12L,Q)

part stock: 625

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 10 mOhm @ 5.5A, 10V,

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TPC8051-H(TE12L,Q)

Toshiba Semiconductor and Storage

TPC8051-H(TE12L,Q)

part stock: 764

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 6.5A, 10V,

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Toshiba Semiconductor and Storage

SSM6J216FE,LF

part stock: 13269

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 32 mOhm @ 3.5A, 4.5V,

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TPCA8005-H(TE12LQM

Toshiba Semiconductor and Storage

TPCA8005-H(TE12LQM

part stock: 644

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V,

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TPCA8105(TE12L,Q,M

Toshiba Semiconductor and Storage

TPCA8105(TE12L,Q,M

part stock: 711

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 33 mOhm @ 3A, 4.5V,

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TPCA8036-H(TE12L,Q

Toshiba Semiconductor and Storage

TPCA8036-H(TE12L,Q

part stock: 729

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 38A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 19A, 10V,

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TPC8014(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8014(TE12L,Q,M)

part stock: 630

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 14 mOhm @ 5.5A, 10V,

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TPCA8008-H(TE12LQM

Toshiba Semiconductor and Storage

TPCA8008-H(TE12LQM

part stock: 655

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 250V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 580 mOhm @ 2A, 10V,

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TPCA8012-H(TE12LQM

Toshiba Semiconductor and Storage

TPCA8012-H(TE12LQM

part stock: 634

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 20A, 10V,

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TK50P04M1(T6RSS-Q)

Toshiba Semiconductor and Storage

TK50P04M1(T6RSS-Q)

part stock: 185151

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 25A, 10V,

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TPCP8003-H(TE85L,F

Toshiba Semiconductor and Storage

TPCP8003-H(TE85L,F

part stock: 798

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.1A, 10V,

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TPC8036-H(TE12L,QM

Toshiba Semiconductor and Storage

TPC8036-H(TE12L,QM

part stock: 6159

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 9A, 10V,

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TPCA8103(TE12L,Q,M

Toshiba Semiconductor and Storage

TPCA8103(TE12L,Q,M

part stock: 630

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V,

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SSM5N15FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM5N15FE(TE85L,F)

part stock: 164036

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V,

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TPC8021-H(TE12LQ,M

Toshiba Semiconductor and Storage

TPC8021-H(TE12LQ,M

part stock: 614

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 17 mOhm @ 5.5A, 10V,

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TPCA8003-H(TE12LQM

Toshiba Semiconductor and Storage

TPCA8003-H(TE12LQM

part stock: 635

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 18A, 10V,

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TPC8026(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8026(TE12L,Q,M)

part stock: 726

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 6.5A, 10V,

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TPC8022-H(TE12LQ,M

Toshiba Semiconductor and Storage

TPC8022-H(TE12LQ,M

part stock: 687

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 27 mOhm @ 3.8A, 10V,

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TPCA8A01-H(TE12L,Q

Toshiba Semiconductor and Storage

TPCA8A01-H(TE12L,Q

part stock: 677

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 18A, 10V,

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TPC8038-H(TE12L,Q)

Toshiba Semiconductor and Storage

TPC8038-H(TE12L,Q)

part stock: 677

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 6A, 10V,

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TPCP8001-H(TE85LFM

Toshiba Semiconductor and Storage

TPCP8001-H(TE85LFM

part stock: 692

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 3.6A, 10V,

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TPCA8A04-H(TE12L,Q

Toshiba Semiconductor and Storage

TPCA8A04-H(TE12L,Q

part stock: 747

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 44A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 22A, 10V,

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TPCA8031-H(TE12L,Q

Toshiba Semiconductor and Storage

TPCA8031-H(TE12L,Q

part stock: 612

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V,

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TPCF8102(TE85L,F,M

Toshiba Semiconductor and Storage

TPCF8102(TE85L,F,M

part stock: 637

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V,

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Toshiba Semiconductor and Storage

TK70D06J1(Q)

part stock: 6092

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 70A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 35A, 10V,

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SSM6J213FE(TE85L,F

Toshiba Semiconductor and Storage

SSM6J213FE(TE85L,F

part stock: 116856

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 103 mOhm @ 1.5A, 4.5V,

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TPC8031-H(TE12LQM)

Toshiba Semiconductor and Storage

TPC8031-H(TE12LQM)

part stock: 703

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 13.3 mOhm @ 5.5A, 10V,

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TPCP8005-H(TE85L,F

Toshiba Semiconductor and Storage

TPCP8005-H(TE85L,F

part stock: 736

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 5.5A, 10V,

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TPC8032-H(TE12LQM)

Toshiba Semiconductor and Storage

TPC8032-H(TE12LQM)

part stock: 631

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 7.5A, 10V,

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TPC8110(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8110(TE12L,Q,M)

part stock: 616

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 4A, 10V,

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Toshiba Semiconductor and Storage

TK5P60W,RVQ

part stock: 90358

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.7A, 10V,

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Toshiba Semiconductor and Storage

TK8P60W5,RVQ

part stock: 102262

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 560 mOhm @ 4A, 10V,

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Toshiba Semiconductor and Storage

TK20J60U(F)

part stock: 12228

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V,

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741

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