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Transistors - Bipolar (BJT) - Arrays, Pre-Biased

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NSBA124EDXV6T1
ON Semiconductor

NSBA124EDXV6T1

part stock: 1456

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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NSBC144EPDXV6T5
ON Semiconductor

NSBC144EPDXV6T5

part stock: 1405

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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EMG2DXV5T5
ON Semiconductor

EMG2DXV5T5

part stock: 3242

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC115EDXV6T1G
ON Semiconductor

NSBC115EDXV6T1G

part stock: 129082

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 100 kOhms, Resistor - Emitter Base (R2): 100 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVMUN5316DW1T1G
ON Semiconductor

NSVMUN5316DW1T1G

part stock: 160200

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSB1706DMW5T1G
ON Semiconductor

NSB1706DMW5T1G

part stock: 136591

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5133DW1T1G
ON Semiconductor

MUN5133DW1T1G

part stock: 183679

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5316DW1T1
ON Semiconductor

MUN5316DW1T1

part stock: 1532

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSM21156DW6T1G
ON Semiconductor

NSM21156DW6T1G

part stock: 1463

Transistor Type: 1 NPN Pre-Biased, 1 PNP, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, 65V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 220 @ 2mA, 5V,

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MUN5130DW1T1G
ON Semiconductor

MUN5130DW1T1G

part stock: 181618

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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MUN5230DW1T1G
ON Semiconductor

MUN5230DW1T1G

part stock: 155743

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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NSTB1004DXV5T1G
ON Semiconductor

NSTB1004DXV5T1G

part stock: 3211

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual),

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NSBC114YPDP6T5G
ON Semiconductor

NSBC114YPDP6T5G

part stock: 167686

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5230DW1T1
ON Semiconductor

MUN5230DW1T1

part stock: 1467

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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MUN5136DW1T1
ON Semiconductor

MUN5136DW1T1

part stock: 1413

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 100 kOhms, Resistor - Emitter Base (R2): 100 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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UMA4NT1G
ON Semiconductor

UMA4NT1G

part stock: 1478

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSBA123EDXV6T1G
ON Semiconductor

NSBA123EDXV6T1G

part stock: 64095

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V,

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SMUN5214DW1T1G
ON Semiconductor

SMUN5214DW1T1G

part stock: 115714

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVBC114YPDXV65G
ON Semiconductor

NSVBC114YPDXV65G

part stock: 1485

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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SMUN5230DW1T1G
ON Semiconductor

SMUN5230DW1T1G

part stock: 174998

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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SMUN5131DW1T1G
ON Semiconductor

SMUN5131DW1T1G

part stock: 110079

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V,

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NSBA144EDP6T5G
ON Semiconductor

NSBA144EDP6T5G

part stock: 162633

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5137DW1T1G
ON Semiconductor

MUN5137DW1T1G

part stock: 3198

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5315DW1T1G
ON Semiconductor

MUN5315DW1T1G

part stock: 150495

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSBC123EDXV6T1
ON Semiconductor

NSBC123EDXV6T1

part stock: 1458

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V,

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MUN5212DW1T1
ON Semiconductor

MUN5212DW1T1

part stock: 1497

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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NSBC124EPDXV6T1G
ON Semiconductor

NSBC124EPDXV6T1G

part stock: 188714

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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EMC5DXV5T1G
ON Semiconductor

EMC5DXV5T1G

part stock: 130128

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V,

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NSVB123JPDXV6T1G
ON Semiconductor

NSVB123JPDXV6T1G

part stock: 107622

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBA115TDP6T5G
ON Semiconductor

NSBA115TDP6T5G

part stock: 146030

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 100 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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MUN5232DW1T1
ON Semiconductor

MUN5232DW1T1

part stock: 1444

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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NSBC123JPDXV6T1
ON Semiconductor

NSBC123JPDXV6T1

part stock: 1461

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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EMD5DXV6T5G
ON Semiconductor

EMD5DXV6T5G

part stock: 162821

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, 47 kOhms, Resistor - Emitter Base (R2): 10 kOhms, 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V,

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NSBA114YDP6T5G
ON Semiconductor

NSBA114YDP6T5G

part stock: 197883

Transistor Type: 2 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVUMC2NT1G
ON Semiconductor

NSVUMC2NT1G

part stock: 193262

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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SMUN5235DW1T3G
ON Semiconductor

SMUN5235DW1T3G

part stock: 170254

Transistor Type: 2 NPN - Pre-Biased (Dual), Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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