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Transistors - Programmable Unijunction

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2N6028RLRMG
ON Semiconductor

2N6028RLRMG

part stock: 2509

Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 600mV, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 25µA,

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2N6028RLRPG
ON Semiconductor

2N6028RLRPG

part stock: 2537

Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 600mV, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 25µA,

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2N6027RL1G
ON Semiconductor

2N6027RL1G

part stock: 2538

Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 1.6V, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 50µA,

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2N6028RLRP
ON Semiconductor

2N6028RLRP

part stock: 2531

Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 600mV, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 25µA,

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2N6027RL1
ON Semiconductor

2N6027RL1

part stock: 2482

Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 1.6V, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 50µA,

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2N6028G
ON Semiconductor

2N6028G

part stock: 2534

Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 600mV, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 25µA,

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2N6027G
ON Semiconductor

2N6027G

part stock: 2493

Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 1.6V, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 50µA,

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2N6028RLRAG
ON Semiconductor

2N6028RLRAG

part stock: 2505

Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 600mV, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 25µA,

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2N6027RLRAG
ON Semiconductor

2N6027RLRAG

part stock: 2518

Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 1.6V, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 50µA,

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2N6028RLRA
ON Semiconductor

2N6028RLRA

part stock: 2522

Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 600mV, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 25µA,

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2N6027RLRA
ON Semiconductor

2N6027RLRA

part stock: 2457

Voltage: 40V, Power Dissipation (Max): 300mW, Voltage - Output: 11V, Voltage - Offset (Vt): 1.6V, Current - Gate to Anode Leakage (Igao): 10nA, Current - Valley (Iv): 50µA,

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