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Transistors - Bipolar (BJT) - Single, Pre-Biased

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NSBA143TF3T5G
ON Semiconductor

NSBA143TF3T5G

part stock: 160398

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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SMUN5232T1G
ON Semiconductor

SMUN5232T1G

part stock: 147194

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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FJNS4202RTA
ON Semiconductor

FJNS4202RTA

part stock: 2323

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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NSBA123TF3T5G
ON Semiconductor

NSBA123TF3T5G

part stock: 180401

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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DTC144TT1G
ON Semiconductor

DTC144TT1G

part stock: 2236

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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FJN4302RBU
ON Semiconductor

FJN4302RBU

part stock: 2221

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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FJNS4211RBU
ON Semiconductor

FJNS4211RBU

part stock: 2298

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 40V, Resistor - Base (R1): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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MUN5114T1
ON Semiconductor

MUN5114T1

part stock: 2193

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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FJNS3215RTA
ON Semiconductor

FJNS3215RTA

part stock: 2220

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V,

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MUN5238T1G
ON Semiconductor

MUN5238T1G

part stock: 103020

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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FJN3313RTA
ON Semiconductor

FJN3313RTA

part stock: 2232

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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FJN3312RBU
ON Semiconductor

FJN3312RBU

part stock: 2221

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 40V, Resistor - Base (R1): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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MUN5237T1G
ON Semiconductor

MUN5237T1G

part stock: 172982

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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FJNS4207RTA
ON Semiconductor

FJNS4207RTA

part stock: 2260

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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FJNS3209RTA
ON Semiconductor

FJNS3209RTA

part stock: 3228

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 40V, Resistor - Base (R1): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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FJN4306RBU
ON Semiconductor

FJN4306RBU

part stock: 2252

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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MMUN2111LT1
ON Semiconductor

MMUN2111LT1

part stock: 2208

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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DTC144EET1
ON Semiconductor

DTC144EET1

part stock: 3281

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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FJV4106RMTF
ON Semiconductor

FJV4106RMTF

part stock: 2220

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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FJNS3202RBU
ON Semiconductor

FJNS3202RBU

part stock: 2279

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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DTA143ZM3T5G
ON Semiconductor

DTA143ZM3T5G

part stock: 149435

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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FJNS4204RBU
ON Semiconductor

FJNS4204RBU

part stock: 2275

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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FJNS3207RTA
ON Semiconductor

FJNS3207RTA

part stock: 2222

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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FJNS3210RBU
ON Semiconductor

FJNS3210RBU

part stock: 2229

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 40V, Resistor - Base (R1): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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MMUN2140LT1G
ON Semiconductor

MMUN2140LT1G

part stock: 183393

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V,

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FJN3312RTA
ON Semiconductor

FJN3312RTA

part stock: 3263

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 40V, Resistor - Base (R1): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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MUN5240T1G
ON Semiconductor

MUN5240T1G

part stock: 148516

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V,

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FJNS4201RBU
ON Semiconductor

FJNS4201RBU

part stock: 3281

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V,

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MMUN2211LT1
ON Semiconductor

MMUN2211LT1

part stock: 2235

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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FJNS3202RTA
ON Semiconductor

FJNS3202RTA

part stock: 2305

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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FJV4109RMTF
ON Semiconductor

FJV4109RMTF

part stock: 2312

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 40V, Resistor - Base (R1): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DTA115TM3T5G
ON Semiconductor

DTA115TM3T5G

part stock: 175500

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 100 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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SMUN5114T3G
ON Semiconductor

SMUN5114T3G

part stock: 103215

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBA115TF3T5G
ON Semiconductor

NSBA115TF3T5G

part stock: 167732

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 100 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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FJN3310RBU
ON Semiconductor

FJN3310RBU

part stock: 3231

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 40V, Resistor - Base (R1): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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FJNS4214RTA
ON Semiconductor

FJNS4214RTA

part stock: 2278

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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