Transistors - Bipolar (BJT) - Single | Discrete Semiconductor Products | 100

2SC2229-Y(T6ONK1FM

part stock: 6992

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 150V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SC2229-Y(SHP1,F,M

part stock: 6990

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 150V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SC2229-Y(SAN2,F,M

part stock: 7022

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 150V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SC2229-Y(SHP,F,M)

part stock: 7021

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 150V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SC2229-Y(MIT,F,M)

part stock: 6703

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 150V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SC2229-Y(MIT1,F,M

part stock: 6975

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 150V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SC2229-O(T6SHP1FM

part stock: 7020

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 150V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SC2229-O(TE6,F,M)

part stock: 7022

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 150V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SC2229-O(T6SAN2FM

part stock: 6954

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 150V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SC2229-O(T6MIT1FM

part stock: 6948

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 150V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SC2229-O(SHP1,F,M

part stock: 6990

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 150V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SC2229-O(SHP,F,M)

part stock: 6947

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 150V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SC2229-O(MITIF,M)

part stock: 7035

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 150V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SC2229-O(MIT1F,M)

part stock: 7005

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 150V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SC2229(TE6SAN1F,M

part stock: 6999

Transistor Type: NPN, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 150V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SC1627A-O,PASF(M

part stock: 7004

Transistor Type: NPN, Current - Collector (Ic) (Max): 400mA, Voltage - Collector Emitter Breakdown (Max): 80V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V,

To Wishlist

Toshiba Semiconductor and Storage

2SC1627A-Y,PASF(M

part stock: 6754

Transistor Type: NPN, Current - Collector (Ic) (Max): 400mA, Voltage - Collector Emitter Breakdown (Max): 80V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V,

To Wishlist

Toshiba Semiconductor and Storage

2SB1495,Q(M

part stock: 6942

Transistor Type: PNP, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V,

To Wishlist

Toshiba Semiconductor and Storage

2SB1495,Q(J

part stock: 6995

Transistor Type: PNP, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V,

To Wishlist

Toshiba Semiconductor and Storage

2SB1457,T6YMEF(M

part stock: 7000

Transistor Type: PNP, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

To Wishlist

Toshiba Semiconductor and Storage

2SB1481(TOJS,Q,M)

part stock: 6996

Transistor Type: PNP, Current - Collector (Ic) (Max): 4A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A, Current - Collector Cutoff (Max): 2µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V,

To Wishlist

Toshiba Semiconductor and Storage

2SB1457,T6TOTOF(J

part stock: 6949

Transistor Type: PNP, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

To Wishlist

Toshiba Semiconductor and Storage

2SB1457(TE6,F,M)

part stock: 6958

Transistor Type: PNP, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

To Wishlist

Toshiba Semiconductor and Storage

2SB1457(T6CNO,A,F)

part stock: 6947

Transistor Type: PNP, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

To Wishlist

Toshiba Semiconductor and Storage

2SB1375,CLARIONF(M

part stock: 6980

Transistor Type: PNP, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 2A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SB1457(T6CANO,F,M

part stock: 7012

Transistor Type: PNP, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

To Wishlist

Toshiba Semiconductor and Storage

2SA965-Y,T6KOJPF(J

part stock: 6968

Transistor Type: PNP, Current - Collector (Ic) (Max): 800mA, Voltage - Collector Emitter Breakdown (Max): 120V, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SA965-Y,T6F(J

part stock: 7012

Transistor Type: PNP, Current - Collector (Ic) (Max): 800mA, Voltage - Collector Emitter Breakdown (Max): 120V, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SA965-Y,SWFF(M

part stock: 6956

Transistor Type: PNP, Current - Collector (Ic) (Max): 800mA, Voltage - Collector Emitter Breakdown (Max): 120V, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SA965-Y,F(J

part stock: 6980

Transistor Type: PNP, Current - Collector (Ic) (Max): 800mA, Voltage - Collector Emitter Breakdown (Max): 120V, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SA965-Y(T6CANO,FM

part stock: 6968

Transistor Type: PNP, Current - Collector (Ic) (Max): 800mA, Voltage - Collector Emitter Breakdown (Max): 120V, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SA965-Y(F,M)

part stock: 7009

Transistor Type: PNP, Current - Collector (Ic) (Max): 800mA, Voltage - Collector Emitter Breakdown (Max): 120V, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SA965-O,F(J

part stock: 6956

Transistor Type: PNP, Current - Collector (Ic) (Max): 800mA, Voltage - Collector Emitter Breakdown (Max): 120V, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SA949-Y,ONK-1F(M

part stock: 6969

Transistor Type: PNP, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 150V, Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

2SA965-O(TE6,F,M)

part stock: 7016

Transistor Type: PNP, Current - Collector (Ic) (Max): 800mA, Voltage - Collector Emitter Breakdown (Max): 120V, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

To Wishlist

ON Semiconductor

2SC6017-E

part stock: 111005

Transistor Type: NPN, Current - Collector (Ic) (Max): 10A, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V,

To Wishlist