Transistors - Bipolar (BJT) - Single, Pre-Biased

MUN5232T1

part stock: 2015

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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NSVDTA113EM3T5G

part stock: 194382

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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NSBA124EF3T5G

part stock: 122944

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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NSVDTC123JM3T5G

part stock: 21685

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBA114EF3T5G

part stock: 186160

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

To Wishlist

FJX4004RTF

part stock: 2027

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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DDTB142JU-7-F

part stock: 104716

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 470 Ohms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V,

To Wishlist

DDTC113ZE-7-F

part stock: 136459

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V,

To Wishlist

DDTA124XCA-7-F

part stock: 194886

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V,

To Wishlist

DDTC144TKA-7-F

part stock: 1939

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

To Wishlist

DDTC114WUA-7

part stock: 2131

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V,

To Wishlist

DDTA124XKA-7-F

part stock: 1871

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V,

To Wishlist

PDTB123ES,126

part stock: 1922

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V,

To Wishlist

PDTC123JK,115

part stock: 1944

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

To Wishlist

PDTC124XS,126

part stock: 1944

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V,

To Wishlist

PBRP123YS,126

part stock: 1944

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 800mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms,

To Wishlist

UNR412100A

part stock: 1962

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V,

To Wishlist

UNR9218G0L

part stock: 3199

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 510 Ohms, Resistor - Emitter Base (R2): 5.1 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V,

To Wishlist

DRA5114E0L

part stock: 135606

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

To Wishlist

UNR921TG0L

part stock: 1921

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist

UNR921DJ0L

part stock: 119372

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V,

To Wishlist

UNR521TG0L

part stock: 2036

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist

DRA2152Z0L

part stock: 192654

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 510 Ohms, Resistor - Emitter Base (R2): 5.1 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V,

To Wishlist

UNR9212G0L

part stock: 195761

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

To Wishlist

UNR9210G0L

part stock: 1952

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

To Wishlist

UNR411200A

part stock: 103552

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

To Wishlist

Toshiba Semiconductor and Storage

UNR211100L

part stock: 1992

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

To Wishlist

RN1406S,LF(D

part stock: 1944

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

RN1108(T5L,F,T)

part stock: 2027

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

To Wishlist

Toshiba Semiconductor and Storage

RN2108ACT(TPL3)

part stock: 1975

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 80mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

To Wishlist

DTD143EKT146

part stock: 121232

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V,

To Wishlist

DTC643TKT146

part stock: 190000

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 20V, Resistor - Base (R1): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V,

To Wishlist

DTC143ZKAT246

part stock: 1983

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

To Wishlist