Transistors - Bipolar (BJT) - Single, Pre-Biased | Discrete Semiconductor Products | 88

BCR 119F E6327

part stock: 1906

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR116WE6327BTSA1

part stock: 1867

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 116T E6327

part stock: 1851

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 116L3 E6327

part stock: 1886

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 116F E6327

part stock: 1882

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 114T E6327

part stock: 1871

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR 114F E6327

part stock: 3258

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR 114L3 E6327

part stock: 1839

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR 112T E6327

part stock: 1851

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

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Infineon Technologies

BCR112WE6327BTSA1

part stock: 1895

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

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BCR 112F E6327

part stock: 5360

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

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BCR 112L3 E6327

part stock: 1840

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

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BCR 108T E6327

part stock: 1842

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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Infineon Technologies

BCR 108L3 E6327

part stock: 3212

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 108F E6327

part stock: 1842

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 108 B6327

part stock: 1832

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 103T E6327

part stock: 1845

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

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BCR 103L3 E6327

part stock: 3195

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

To Wishlist

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BCR 103F E6327

part stock: 1824

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

To Wishlist

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BCR 101L3 E6327

part stock: 3195

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 100 kOhms, Resistor - Emitter Base (R2): 100 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR512E6327HTSA1

part stock: 183749

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V,

To Wishlist

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BCR555E6327HTSA1

part stock: 169612

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V,

To Wishlist

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BCR142E6327HTSA1

part stock: 111124

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

To Wishlist

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BCR198E6327HTSA1

part stock: 196205

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

To Wishlist

Infineon Technologies

BCR183E6327HTSA1

part stock: 112554

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

To Wishlist

Infineon Technologies

BCR533E6327HTSA1

part stock: 148436

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V,

To Wishlist

Infineon Technologies

BCR148E6327HTSA1

part stock: 179063

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

To Wishlist

Infineon Technologies

BCR133E6327HTSA1

part stock: 117390

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

To Wishlist

Infineon Technologies

BCR505E6327HTSA1

part stock: 155798

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V,

To Wishlist

Infineon Technologies

BCR108E6327HTSA1

part stock: 107313

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

To Wishlist

Infineon Technologies

BCR503E6327HTSA1

part stock: 187004

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V,

To Wishlist

Infineon Technologies

BCR135E6327HTSA1

part stock: 185332

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

To Wishlist

Infineon Technologies

BCR523E6327HTSA1

part stock: 192928

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V,

To Wishlist

Infineon Technologies

BCR116E6327HTSA1

part stock: 185599

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

To Wishlist

Infineon Technologies

BCR553E6327HTSA1

part stock: 184944

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V,

To Wishlist

Infineon Technologies

BCR555E6433HTMA1

part stock: 167043

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V,

To Wishlist