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Transistors - Bipolar (BJT) - Single, Pre-Biased

DDTA144TE-7
Diodes Incorporated

DDTA144TE-7

part stock: 3273

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

To Wishlist
DDTD143TC-7-F
Diodes Incorporated

DDTD143TC-7-F

part stock: 182032

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V,

To Wishlist
DDTC124GCA-7
Diodes Incorporated

DDTC124GCA-7

part stock: 2152

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V,

To Wishlist
DDTB123TC-7-F
Diodes Incorporated

DDTB123TC-7-F

part stock: 125504

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V,

To Wishlist
DDTC113TUA-7
Diodes Incorporated

DDTC113TUA-7

part stock: 2154

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 1 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

To Wishlist
DDTC113TCA-7
Diodes Incorporated

DDTC113TCA-7

part stock: 2182

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 1 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

To Wishlist
DDTB142JU-7
Diodes Incorporated

DDTB142JU-7

part stock: 2124

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 470 Ohms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V,

To Wishlist
DDTA114YCA-7
Diodes Incorporated

DDTA114YCA-7

part stock: 105430

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V,

To Wishlist
DDTC114ECA-7
Diodes Incorporated

DDTC114ECA-7

part stock: 2198

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

To Wishlist
DDTC114GCA-7-F
Diodes Incorporated

DDTC114GCA-7-F

part stock: 167629

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

To Wishlist
RN2114MFV,L3F
Toshiba Semiconductor and Storage

RN2114MFV,L3F

part stock: 157

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

To Wishlist
RN1318(TE85L,F)
Toshiba Semiconductor and Storage

RN1318(TE85L,F)

part stock: 168872

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

To Wishlist
RN1106MFV,L3F
Toshiba Semiconductor and Storage

RN1106MFV,L3F

part stock: 161993

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

To Wishlist
RN1313(TE85L,F)
Toshiba Semiconductor and Storage

RN1313(TE85L,F)

part stock: 191183

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

To Wishlist
RN1103,LF(CT
Toshiba Semiconductor and Storage

RN1103,LF(CT

part stock: 141203

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist
RN1103MFV,L3F
Toshiba Semiconductor and Storage

RN1103MFV,L3F

part stock: 140595

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

To Wishlist
UNR9218J0L
Panasonic Electronic Components

UNR9218J0L

part stock: 2199

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 510 Ohms, Resistor - Emitter Base (R2): 5.1 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V,

To Wishlist
DRA5L14Y0L
Panasonic Electronic Components

DRA5L14Y0L

part stock: 102289

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 30V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist
UNR211700L
Panasonic Electronic Components

UNR211700L

part stock: 2154

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

To Wishlist
DRA3143Y0L
Panasonic Electronic Components

DRA3143Y0L

part stock: 118750

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

To Wishlist
UNR31AE00L
Panasonic Electronic Components

UNR31AE00L

part stock: 2198

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 80mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

To Wishlist
DRC2114W0L
Panasonic Electronic Components

DRC2114W0L

part stock: 186264

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V,

To Wishlist
DRC2144W0L
Panasonic Electronic Components

DRC2144W0L

part stock: 105865

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

To Wishlist
UNR422200A
Panasonic Electronic Components

UNR422200A

part stock: 2279

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V,

To Wishlist
UNR211D00L
Panasonic Electronic Components

UNR211D00L

part stock: 2190

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V,

To Wishlist
FJN3313RTA
ON Semiconductor

FJN3313RTA

part stock: 2232

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

To Wishlist
FJN3312RBU
ON Semiconductor

FJN3312RBU

part stock: 2221

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 40V, Resistor - Base (R1): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

To Wishlist
MUN5237T1G
ON Semiconductor

MUN5237T1G

part stock: 172982

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist
FJNS4207RTA
ON Semiconductor

FJNS4207RTA

part stock: 2260

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

To Wishlist
FJNS3209RTA
ON Semiconductor

FJNS3209RTA

part stock: 3228

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 40V, Resistor - Base (R1): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

To Wishlist
FJN4306RBU
ON Semiconductor

FJN4306RBU

part stock: 2252

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

To Wishlist
MMUN2111LT1
ON Semiconductor

MMUN2111LT1

part stock: 2208

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

To Wishlist
DTC144EET1
ON Semiconductor

DTC144EET1

part stock: 3281

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

To Wishlist
PDTA115EE,115
NXP USA Inc.

PDTA115EE,115

part stock: 2156

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 20mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 100 kOhms, Resistor - Emitter Base (R2): 100 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V,

To Wishlist
PDTA115TK,115
NXP USA Inc.

PDTA115TK,115

part stock: 2250

Transistor Type: PNP - Pre-Biased, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 100 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

To Wishlist
PDTD123YQAZ
Nexperia USA Inc.

PDTD123YQAZ

part stock: 194211

Transistor Type: NPN - Pre-Biased, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V,

To Wishlist