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Transistors - Bipolar (BJT) - RF

MPS5179_D26Z
ON Semiconductor

MPS5179_D26Z

part stock: 7035

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 2GHz, Noise Figure (dB Typ @ f): 5dB @ 200MHz, Gain: 15dB, Power - Max: 350mW,

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MPSH10RLRA
ON Semiconductor

MPSH10RLRA

part stock: 7086

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 25V, Frequency - Transition: 650MHz, Power - Max: 350mW,

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KSC1674RBU
ON Semiconductor

KSC1674RBU

part stock: 7100

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 20V, Frequency - Transition: 600MHz, Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz, Power - Max: 250mW,

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KSC1393OBU
ON Semiconductor

KSC1393OBU

part stock: 7116

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 30V, Frequency - Transition: 700MHz, Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz, Gain: 20dB ~ 24dB, Power - Max: 250mW,

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KSC2786RTA
ON Semiconductor

KSC2786RTA

part stock: 7097

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 20V, Frequency - Transition: 600MHz, Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz, Gain: 18dB ~ 22dB, Power - Max: 250mW,

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KSC2786RBU
ON Semiconductor

KSC2786RBU

part stock: 7111

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 20V, Frequency - Transition: 600MHz, Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz, Gain: 18dB ~ 22dB, Power - Max: 250mW,

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KSC2755OMTF
ON Semiconductor

KSC2755OMTF

part stock: 7147

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 30V, Frequency - Transition: 600MHz, Noise Figure (dB Typ @ f): 2dB @ 200MHz, Gain: 20dB ~ 23dB, Power - Max: 150mW,

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MPS3563G
ON Semiconductor

MPS3563G

part stock: 7167

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 1.5GHz, Noise Figure (dB Typ @ f): 6.5dB @ 60MHz, Gain: 14dB @ 200MHz, Power - Max: 350W,

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MCH4009-TL-H
ON Semiconductor

MCH4009-TL-H

part stock: 124863

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 3.5V, Frequency - Transition: 25GHz, Noise Figure (dB Typ @ f): 1.1dB @ 2GHz, Gain: 13.5dB, Power - Max: 120mW,

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MMBTH10
ON Semiconductor

MMBTH10

part stock: 185639

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 25V, Frequency - Transition: 650MHz, Power - Max: 225mW,

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NE85639R-T1-A
CEL

NE85639R-T1-A

part stock: 4708

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz, Gain: 13.5dB, Power - Max: 200mW,

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NE67818-T1-A
CEL

NE67818-T1-A

part stock: 7051

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 6V, Frequency - Transition: 12GHz, Noise Figure (dB Typ @ f): 1.7dB @ 2GHz, Gain: 10dB, Power - Max: 200mW,

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NE68133-A
CEL

NE68133-A

part stock: 7119

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 10V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1.2dB @ 1GHz, Gain: 13dB, Power - Max: 200mW,

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NE685M03-A
CEL

NE685M03-A

part stock: 7179

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 5V, Frequency - Transition: 12GHz, Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz, Power - Max: 125mW,

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NE68030-A
CEL

NE68030-A

part stock: 7111

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 10V, Frequency - Transition: 10GHz, Noise Figure (dB Typ @ f): 1.9dB @ 2GHz, Gain: 9.4dB, Power - Max: 150mW,

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NE85618-A
CEL

NE85618-A

part stock: 7130

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 6.5GHz, Noise Figure (dB Typ @ f): 1.1dB @ 1GHz, Gain: 13dB, Power - Max: 150mW,

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NE94433-T1B-A
CEL

NE94433-T1B-A

part stock: 7100

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 15V, Frequency - Transition: 2GHz, Power - Max: 150mW,

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NE68130-A
CEL

NE68130-A

part stock: 7161

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 10V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1.4dB @ 1GHz, Gain: 9dB, Power - Max: 150mW,

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NE851M33-T3-A
CEL

NE851M33-T3-A

part stock: 7125

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 5.5V, Frequency - Transition: 4.5GHz, Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz, Power - Max: 130mW,

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UPA810T-T1-A
CEL

UPA810T-T1-A

part stock: 7100

Transistor Type: 2 NPN (Dual), Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 4.5GHz, Noise Figure (dB Typ @ f): 1.2dB @ 1GHz, Gain: 9dB, Power - Max: 200mW,

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NE85630-T1
CEL

NE85630-T1

part stock: 7125

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 4.5GHz, Noise Figure (dB Typ @ f): 1.3dB ~ 2.2dB @ 1GHz ~ 2GHz, Gain: 6dB ~ 12dB, Power - Max: 150mW,

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NE687M13-A
CEL

NE687M13-A

part stock: 7201

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 3V, Frequency - Transition: 14GHz, Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 2GHz, Power - Max: 90mW,

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NE68830-A
CEL

NE68830-A

part stock: 4773

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 6V, Frequency - Transition: 4.5GHz, Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz, Power - Max: 150mW,

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NE68519-A
CEL

NE68519-A

part stock: 7177

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 6V, Frequency - Transition: 12GHz, Noise Figure (dB Typ @ f): 1.5dB @ 2GHz, Gain: 11dB, Power - Max: 125mW,

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NE687M33-A
CEL

NE687M33-A

part stock: 7053

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 3V, Frequency - Transition: 12GHz, Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 2GHz, Power - Max: 90mW,

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NE68019-T1
CEL

NE68019-T1

part stock: 7153

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 10V, Frequency - Transition: 10GHz, Noise Figure (dB Typ @ f): 1.7dB ~ 1.9dB @ 1GHz ~ 2GHz, Gain: 9.6dB ~ 13.5dB, Power - Max: 100mW,

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SD1433
STMicroelectronics

SD1433

part stock: 7113

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 16V, Gain: 7dB, Power - Max: 58W,

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SD1477
STMicroelectronics

SD1477

part stock: 7116

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 18V, Gain: 6dB, Power - Max: 270W,

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MS2393
Microsemi Corporation

MS2393

part stock: 7035

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 65V, Frequency - Transition: 1.025GHz ~ 1.15GHz, Gain: 8.2dB, Power - Max: 583W,

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MPSH81 TRE
Central Semiconductor Corp

MPSH81 TRE

part stock: 7093

Transistor Type: PNP, Voltage - Collector Emitter Breakdown (Max): 20V, Frequency - Transition: 600MHz,

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ZTX325STZ
Diodes Incorporated

ZTX325STZ

part stock: 7102

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 15V, Frequency - Transition: 1.3GHz, Noise Figure (dB Typ @ f): 5dB @ 500MHz, Gain: 53dB, Power - Max: 350mW,

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DSC9F0100L
Panasonic Electronic Components

DSC9F0100L

part stock: 7058

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 10V, Frequency - Transition: 1.9GHz, Power - Max: 125mW,

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HN3C10FUTE85LF
Toshiba Semiconductor and Storage

HN3C10FUTE85LF

part stock: 7065

Transistor Type: 2 NPN (Dual), Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1.1dB @ 1GHz, Gain: 11.5dB, Power - Max: 200mW,

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PBR941B,215
NXP USA Inc.

PBR941B,215

part stock: 156100

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 10V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz, Power - Max: 360mW,

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HFA3127B96
Renesas Electronics America Inc.

HFA3127B96

part stock: 7188

Transistor Type: 5 NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 8GHz, Noise Figure (dB Typ @ f): 3.5dB @ 1GHz, Power - Max: 150mW,

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LM3046M/NOPB
Texas Instruments

LM3046M/NOPB

part stock: 100932

Transistor Type: 5 NPN, Voltage - Collector Emitter Breakdown (Max): 15V, Noise Figure (dB Typ @ f): 3.25dB @ 1kHz, Power - Max: 750mW,

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