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Transistors - Bipolar (BJT) - RF

15GN01MA-TL-E
ON Semiconductor

15GN01MA-TL-E

part stock: 176347

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 8V, Frequency - Transition: 1.5GHz, Power - Max: 400mW,

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15GN01CA-TB-E
ON Semiconductor

15GN01CA-TB-E

part stock: 194654

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 8V, Frequency - Transition: 1.5GHz, Power - Max: 200mW,

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2SC5536A-TL-H
ON Semiconductor

2SC5536A-TL-H

part stock: 129846

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 1.7GHz, Noise Figure (dB Typ @ f): 1.8dB @ 150MHz, Gain: 16dB, Power - Max: 100mW,

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2SC5646A-TL-H
ON Semiconductor

2SC5646A-TL-H

part stock: 145975

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 4V, Frequency - Transition: 10GHz ~ 12.5GHz, Noise Figure (dB Typ @ f): 1.5dB @ 2GHz, Gain: 9.5dB ~ 10.5dB @ 2GHz, Power - Max: 100mW,

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2SC5490A-TL-H
ON Semiconductor

2SC5490A-TL-H

part stock: 102087

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 10V, Frequency - Transition: 8GHz, Noise Figure (dB Typ @ f): 1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz, Gain: 10dB ~ 5.5dB @ 1.5GHz, Power - Max: 100mW,

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2SC5227A-4-TB-E
ON Semiconductor

2SC5227A-4-TB-E

part stock: 149544

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 10V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1dB @ 1GHz, Gain: 12dB, Power - Max: 200mW,

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2SC5347AE-TD-E
ON Semiconductor

2SC5347AE-TD-E

part stock: 107074

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 4.7GHz, Noise Figure (dB Typ @ f): 1.8dB @ 1GHz, Gain: 8dB, Power - Max: 1.3W,

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10A060
Microsemi Corporation

10A060

part stock: 605

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 24V, Frequency - Transition: 1GHz, Gain: 8dB ~ 8.5dB, Power - Max: 21W,

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2N4957UB
Microsemi Corporation

2N4957UB

part stock: 2413

Transistor Type: PNP, Voltage - Collector Emitter Breakdown (Max): 30V, Noise Figure (dB Typ @ f): 3.5dB @ 450MHz, Gain: 25dB, Power - Max: 200mW,

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2A8
Microsemi Corporation

2A8

part stock: 697

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 21V, Frequency - Transition: 2GHz, Gain: 7dB ~ 9dB, Power - Max: 5.3W,

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23A025
Microsemi Corporation

23A025

part stock: 549

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 22V, Frequency - Transition: 3.7GHz, Gain: 6dB ~ 6.3dB, Power - Max: 9W,

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2307
Microsemi Corporation

2307

part stock: 648

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 42V, Frequency - Transition: 2.3GHz, Gain: 8dB, Power - Max: 20.5W,

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2SC4098T106P
Rohm Semiconductor

2SC4098T106P

part stock: 113796

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 25V, Frequency - Transition: 300MHz, Power - Max: 200mW,

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2SC4618TLN
Rohm Semiconductor

2SC4618TLN

part stock: 145036

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 25V, Frequency - Transition: 300MHz, Power - Max: 150mW,

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2SC4713KT146S
Rohm Semiconductor

2SC4713KT146S

part stock: 183409

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 6V, Frequency - Transition: 800MHz, Power - Max: 200mW,

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2SC4713KT146R
Rohm Semiconductor

2SC4713KT146R

part stock: 149510

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 6V, Frequency - Transition: 800MHz, Power - Max: 200mW,

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2SC5087YTE85LF
Toshiba Semiconductor and Storage

2SC5087YTE85LF

part stock: 144

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1.1dB @ 1GHz, Gain: 13dB, Power - Max: 150mW,

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2SC5084-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC5084-O(TE85L,F)

part stock: 170

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1.1dB @ 1GHz, Gain: 11dB, Power - Max: 150mW,

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2SC4215-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SC4215-Y(TE85L,F)

part stock: 171976

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 30V, Frequency - Transition: 550MHz, Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz, Gain: 17dB ~ 23dB, Power - Max: 100mW,

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2SC5066-O,LF
Toshiba Semiconductor and Storage

2SC5066-O,LF

part stock: 111075

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1dB @ 500MHz, Power - Max: 100mW,

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2SC5085-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SC5085-Y(TE85L,F)

part stock: 128600

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1.1dB @ 1GHz, Gain: 11dB ~ 16.5dB, Power - Max: 100mW,

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2SC5086-O,LF
Toshiba Semiconductor and Storage

2SC5086-O,LF

part stock: 121034

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1dB @ 500MHz, Power - Max: 100mW,

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2SC5065-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC5065-O(TE85L,F)

part stock: 190

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1dB @ 500MHz, Power - Max: 100mW,

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2SC5085-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC5085-O(TE85L,F)

part stock: 170

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1dB @ 500MHz, Power - Max: 100mW,

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2SC5095-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC5095-O(TE85L,F)

part stock: 187

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 10V, Frequency - Transition: 10GHz, Noise Figure (dB Typ @ f): 1.8dB @ 2GHz, Gain: 13dB ~ 7dB, Power - Max: 100mW,

To Wishlist
2SC5086-Y,LF
Toshiba Semiconductor and Storage

2SC5086-Y,LF

part stock: 173074

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1dB @ 500MHz, Power - Max: 100mW,

To Wishlist
2SC5095-R(TE85L,F)
Toshiba Semiconductor and Storage

2SC5095-R(TE85L,F)

part stock: 128

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 10V, Frequency - Transition: 10GHz, Noise Figure (dB Typ @ f): 1.8dB @ 2GHz, Gain: 13dB ~ 7.5dB, Power - Max: 100mW,

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2SC4915-O,LF
Toshiba Semiconductor and Storage

2SC4915-O,LF

part stock: 124837

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 30V, Frequency - Transition: 550MHz, Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz, Gain: 17dB ~ 23dB, Power - Max: 100mW,

To Wishlist
2SC5084YTE85LF
Toshiba Semiconductor and Storage

2SC5084YTE85LF

part stock: 152602

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1.1dB @ 1GHz, Gain: 11dB, Power - Max: 150mW,

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2SC5087-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC5087-O(TE85L,F)

part stock: 162523

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1dB ~ 1.1dB @ 500MHz ~ 1GHz, Power - Max: 150mW,

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2N5179
Central Semiconductor Corp

2N5179

part stock: 11976

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 2GHz, Noise Figure (dB Typ @ f): 4.5dB @ 200MHz, Gain: 15dB, Power - Max: 200mW,

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2N918
Central Semiconductor Corp

2N918

part stock: 11009

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 15V, Frequency - Transition: 600MHz, Noise Figure (dB Typ @ f): 6dB @ 60kHz, Power - Max: 200mW,

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2N4427
Central Semiconductor Corp

2N4427

part stock: 25708

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 20V, Frequency - Transition: 500MHz, Gain: 10dB, Power - Max: 1W,

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2N2857
Central Semiconductor Corp

2N2857

part stock: 10939

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 15V, Frequency - Transition: 1.9GHz, Noise Figure (dB Typ @ f): 4.5dB @ 450MHz, Power - Max: 200mW,

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2SC3357-T1-A
CEL

2SC3357-T1-A

part stock: 7357

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 6.5GHz, Noise Figure (dB Typ @ f): 1.8dB @ 1GHz, Gain: 10dB, Power - Max: 1.2W,

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2SC5010-T1-A
CEL

2SC5010-T1-A

part stock: 7305

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 6V, Frequency - Transition: 12GHz, Noise Figure (dB Typ @ f): 1.5dB @ 2GHz, Gain: 8.5dB, Power - Max: 125mW,

To Wishlist