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Transistors - Bipolar (BJT) - RF

BF959RL1G
ON Semiconductor

BF959RL1G

part stock: 4758

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 20V, Frequency - Transition: 700MHz, Noise Figure (dB Typ @ f): 3dB @ 200MHz, Power - Max: 625mW,

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BF959G
ON Semiconductor

BF959G

part stock: 7162

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 20V, Frequency - Transition: 700MHz, Noise Figure (dB Typ @ f): 3dB @ 200MHz, Power - Max: 625mW,

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BFR750L3RHE6327XTSA1
Infineon Technologies

BFR750L3RHE6327XTSA1

part stock: 4729

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 4.7V, Frequency - Transition: 37GHz, Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz, Gain: 21dB, Power - Max: 360mW,

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BFP 740F E6327
Infineon Technologies

BFP 740F E6327

part stock: 7178

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 4.7V, Frequency - Transition: 42GHz, Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz, Gain: 27.5dB, Power - Max: 160mW,

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BGB 540 E6327
Infineon Technologies

BGB 540 E6327

part stock: 7143

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 3.5V, Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 900MHz ~ 1.8GHz, Gain: 16dB ~ 17.5dB, Power - Max: 120mW,

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BFP740E6327HTSA1
Infineon Technologies

BFP740E6327HTSA1

part stock: 7235

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 4.7V, Frequency - Transition: 42GHz, Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz, Gain: 27dB, Power - Max: 160mW,

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BFS 481 E6327
Infineon Technologies

BFS 481 E6327

part stock: 7212

Transistor Type: 2 NPN (Dual), Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 8GHz, Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz, Gain: 20dB, Power - Max: 175mW,

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BFS 483 E6327
Infineon Technologies

BFS 483 E6327

part stock: 7234

Transistor Type: 2 NPN (Dual), Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 8GHz, Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz, Gain: 19dB, Power - Max: 450mW,

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BFS 466L6 E6327
Infineon Technologies

BFS 466L6 E6327

part stock: 7227

Transistor Type: 2 NPN (Dual), Voltage - Collector Emitter Breakdown (Max): 5V, 9V, Frequency - Transition: 22GHz, 14GHz, Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz, Gain: 12dB ~ 17dB, Power - Max: 200mW, 210mW,

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BFS 469L6 E6327
Infineon Technologies

BFS 469L6 E6327

part stock: 7177

Transistor Type: 2 NPN (Dual), Voltage - Collector Emitter Breakdown (Max): 5V, 10V, Frequency - Transition: 22GHz, 9GHz, Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz, Gain: 14.5dB, Power - Max: 200mW, 250mW,

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BFS 460L6 E6327
Infineon Technologies

BFS 460L6 E6327

part stock: 4717

Transistor Type: 2 NPN (Dual), Voltage - Collector Emitter Breakdown (Max): 5.8V, Frequency - Transition: 22GHz, Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz, Gain: 10dB ~ 14.5dB, Power - Max: 200mW,

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BFS 386L6 E6327
Infineon Technologies

BFS 386L6 E6327

part stock: 7190

Transistor Type: 2 NPN (Dual), Voltage - Collector Emitter Breakdown (Max): 6V, Frequency - Transition: 14GHz, Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 1.8GHz ~ 3GHz, Gain: 10dB ~ 14.5dB, Power - Max: 210mW, 380mW,

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BFS 380L6 E6327
Infineon Technologies

BFS 380L6 E6327

part stock: 7176

Transistor Type: 2 NPN (Dual), Voltage - Collector Emitter Breakdown (Max): 9V, Frequency - Transition: 14GHz, Noise Figure (dB Typ @ f): 1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz, Gain: 8dB ~ 12dB, Power - Max: 380mW,

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BFS 17P E6433
Infineon Technologies

BFS 17P E6433

part stock: 7154

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 15V, Frequency - Transition: 1.4GHz, Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz, Power - Max: 280mW,

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BFR 949T E6327
Infineon Technologies

BFR 949T E6327

part stock: 7189

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 10V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz, Gain: 20dB, Power - Max: 250mW,

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BFR 949L3 E6327
Infineon Technologies

BFR 949L3 E6327

part stock: 7148

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 10V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz, Gain: 21.5dB, Power - Max: 250mW,

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BFR 93AW E6327
Infineon Technologies

BFR 93AW E6327

part stock: 7172

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 6GHz, Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz, Gain: 10.5dB ~ 15.5dB, Power - Max: 300mW,

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BFR 92W E6327
Infineon Technologies

BFR 92W E6327

part stock: 7218

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 15V, Frequency - Transition: 5GHz, Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz, Gain: 11.5dB ~ 17dB, Power - Max: 280mW,

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BFR 740L3 E6327
Infineon Technologies

BFR 740L3 E6327

part stock: 7194

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 4.7V, Frequency - Transition: 42GHz, Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz, Gain: 24dB, Power - Max: 160mW,

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BFR 380T E6327
Infineon Technologies

BFR 380T E6327

part stock: 7187

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 9V, Frequency - Transition: 14GHz, Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz, Gain: 12.5dB, Power - Max: 380mW,

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BFR 360T E6327
Infineon Technologies

BFR 360T E6327

part stock: 7217

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 9V, Frequency - Transition: 14GHz, Noise Figure (dB Typ @ f): 1dB @ 1.8GHz, Gain: 13.5dB, Power - Max: 210mW,

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BFR 360L3 E6327
Infineon Technologies

BFR 360L3 E6327

part stock: 7224

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 9V, Frequency - Transition: 14GHz, Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz, Gain: 11.5dB ~ 16dB, Power - Max: 210mW,

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BFR 340T E6327
Infineon Technologies

BFR 340T E6327

part stock: 7144

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 9V, Frequency - Transition: 14GHz, Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz, Gain: 15dB, Power - Max: 60mW,

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BFR 183T E6327
Infineon Technologies

BFR 183T E6327

part stock: 7186

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 8GHz, Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 900MHz ~ 1.8GHz, Gain: 19.5dB, Power - Max: 250mW,

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BFR 182T E6327
Infineon Technologies

BFR 182T E6327

part stock: 7229

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 8GHz, Noise Figure (dB Typ @ f): 1.2dB ~ 1.9dB @ 900MHz ~ 1.8GHz, Gain: 20dB, Power - Max: 250mW,

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BFR 181T E6327
Infineon Technologies

BFR 181T E6327

part stock: 5478

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 8GHz, Noise Figure (dB Typ @ f): 1.45dB ~ 1.8dB @ 900MHz ~ 1.8GHz, Gain: 19.5dB, Power - Max: 175mW,

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BFR 182 B6663
Infineon Technologies

BFR 182 B6663

part stock: 7220

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 8GHz, Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz, Gain: 12dB ~ 18dB, Power - Max: 250mW,

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BFR 181 E6780
Infineon Technologies

BFR 181 E6780

part stock: 7187

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 8GHz, Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz, Gain: 18.5dB, Power - Max: 175mW,

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BFP 620F E7764
Infineon Technologies

BFP 620F E7764

part stock: 7181

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 2.8V, Frequency - Transition: 65GHz, Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz, Gain: 21dB, Power - Max: 185mW,

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BFP405E6433HTMA1
Infineon Technologies

BFP405E6433HTMA1

part stock: 7182

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 5V, Frequency - Transition: 25GHz, Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz, Gain: 23dB, Power - Max: 75mW,

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BFP420E6433HTMA1
Infineon Technologies

BFP420E6433HTMA1

part stock: 7168

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 5V, Frequency - Transition: 25GHz, Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz, Gain: 21dB, Power - Max: 160mW,

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BFP 196R E6501
Infineon Technologies

BFP 196R E6501

part stock: 7195

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 7.5GHz, Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz, Gain: 10.5dB ~ 16.5dB, Power - Max: 700mW,

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BFG 235 E6327
Infineon Technologies

BFG 235 E6327

part stock: 7172

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 15V, Frequency - Transition: 5.5GHz, Noise Figure (dB Typ @ f): 1.7dB @ 900MHz, Gain: 12.5dB, Power - Max: 2W,

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BFG 196 E6327
Infineon Technologies

BFG 196 E6327

part stock: 7184

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 7.5GHz, Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz, Gain: 9dB ~ 14.5dB, Power - Max: 800mW,

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BFG 19S E6327
Infineon Technologies

BFG 19S E6327

part stock: 7142

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 15V, Frequency - Transition: 5.5GHz, Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 900MHz ~ 1.8GHz, Gain: 14dB ~ 8.5dB, Power - Max: 1W,

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BFG 193 E6433
Infineon Technologies

BFG 193 E6433

part stock: 7137

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, Frequency - Transition: 8GHz, Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz, Gain: 10.5dB ~ 16dB, Power - Max: 600mW,

To Wishlist