Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products | 100

BSS138W-TP

part stock: 114968

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 220mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V,

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Infineon Technologies

BSS806NEH6327XTSA1

part stock: 133510

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V,

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Infineon Technologies

BSL307SPH6327XTSA1

part stock: 173921

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 43 mOhm @ 5.5A, 10V,

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Infineon Technologies

BSR302NL6327HTSA1

part stock: 147786

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.7A, 10V,

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Infineon Technologies

BSP149H6327XTSA1

part stock: 151561

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 660mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V,

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Infineon Technologies

BSS126H6327XTSA2

part stock: 139015

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 21mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

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Infineon Technologies

BSR315PH6327XTSA1

part stock: 154692

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 620mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 800 mOhm @ 620mA, 10V,

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Infineon Technologies

BSP300H6327XUSA1

part stock: 149949

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 800V, Current - Continuous Drain (Id) @ 25°C: 190mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 20 Ohm @ 190mA, 10V,

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Infineon Technologies

BUZ73LHXKSA1

part stock: 1204

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.5A, 5V,

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Infineon Technologies

BUZ73ALHXKSA1

part stock: 1178

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 5V,

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Infineon Technologies

BUZ73A H3046

part stock: 1626

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.5A, 10V,

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Infineon Technologies

BUZ73A H

part stock: 1233

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.5A, 10V,

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Infineon Technologies

BUZ73HXKSA1

part stock: 1190

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V,

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Infineon Technologies

BUZ73H3046XKSA1

part stock: 1217

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V,

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Infineon Technologies

BUZ31L H

part stock: 1152

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 7A, 5V,

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Infineon Technologies

BUZ31HXKSA1

part stock: 1196

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 5V,

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Infineon Technologies

BSS84PH6327XTSA1

part stock: 1174

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 170mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8 Ohm @ 170mA, 10V,

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Nexperia USA Inc.

BUK7D25-40EX

part stock: 9923

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V,

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Nexperia USA Inc.

BUK7905-40AIE,127

part stock: 28752

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5 mOhm @ 50A, 10V,

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Nexperia USA Inc.

BUK6228-55C,118

part stock: 183525

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 29 mOhm @ 10A, 10V,

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Nexperia USA Inc.

BUK9610-100B,118

part stock: 61512

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK6607-55C,118

part stock: 123826

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK962R8-60E,118

part stock: 53057

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK7635-55A,118

part stock: 157535

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 35 mOhm @ 20A, 10V,

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ON Semiconductor

BMS4003

part stock: 1258

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 10V,

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ON Semiconductor

BXL4001

part stock: 1160

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 75V, Current - Continuous Drain (Id) @ 25°C: 85A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 43A, 10V,

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ON Semiconductor

BMS3003

part stock: 1228

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 78A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 39A, 10V,

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ON Semiconductor

BFL4007

part stock: 1221

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 680 mOhm @ 7A, 10V,

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ON Semiconductor

BFL4036

part stock: 1229

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 520 mOhm @ 7A, 10V,

To Wishlist

ON Semiconductor

BFL4004

part stock: 1163

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 800V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3.25A, 10V,

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ON Semiconductor

BFL4037

part stock: 1124

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V,

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ON Semiconductor

BMS4007

part stock: 1121

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 75V, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 30A, 10V,

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ON Semiconductor

BFL4026

part stock: 6121

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 2.5A, 10V,

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ON Semiconductor

BFL4001

part stock: 1193

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 3.25A, 10V,

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ON Semiconductor

BBS3002-DL-E

part stock: 6191

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 50A, 10V,

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NXP USA Inc.

BUK9875-100A,115

part stock: 1199

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 72 mOhm @ 8A, 10V,

To Wishlist