Type | Description |
Part Status | Obsolete |
---|---|
FET Type | 2 N-Channel (Dual) |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 25A |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 25A, 15V |
Vgs(th) (Max) @ Id | 5.5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs | 620nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 800V |
Power - Max | 20mW |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
RoHS Status | RoHS Compliant |
---|---|
Moisture Sensitivity Level (MSL) | Not Applicable |
Lifecycle Status | Obsolete / End of life |
Stock Category | Available stock |