Type | Description |
Part Status | Active |
---|---|
FET Type | 6 N-Channel (3-Phase Bridge) |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 29.5A (Tc) |
Rds On (Max) @ Id, Vgs | 98 mOhm @ 20A, 20V |
Vgs(th) (Max) @ Id | 2.2V @ 1mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs | 61.5nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 800V |
Power - Max | 167W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
RoHS Status | RoHS Compliant |
---|---|
Moisture Sensitivity Level (MSL) | Not Applicable |
Lifecycle Status | Obsolete / End of life |
Stock Category | Available stock |