Type | Description |
Part Status | Active |
---|---|
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 423A (Tc) |
Rds On (Max) @ Id, Vgs | 5.7 mOhm @ 300A, 20V |
Vgs(th) (Max) @ Id | 2.3V @ 15mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs | 1025nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 11700pF @ 600V |
Power - Max | 1660W |
Operating Temperature | 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module, Screw Terminals |
Supplier Device Package | Module |
RoHS Status | RoHS Compliant |
---|---|
Moisture Sensitivity Level (MSL) | Not Applicable |
Lifecycle Status | Obsolete / End of life |
Stock Category | Available stock |