| Type | Description |
| Part Status | Active |
|---|---|
| FET Type | N-Channel |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 1200V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 90 mOhm @ 20A, 15V |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 51nC @ 15V |
| Vgs (Max) | +15V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 1000V |
| FET Feature | - |
| Power Dissipation (Max) | 113.6W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| RoHS Status | RoHS Compliant |
|---|---|
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Lifecycle Status | Obsolete / End of life |
| Stock Category | Available stock |
