Diodes - Rectifiers - Single

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Diodes - Rectifiers - Single

Vishay Semiconductor Diodes Division

BYG23M-M3/TR

part stock: 194309

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 1000V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG24DHM3_A/H

part stock: 192644

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 200V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG21M-M3/TR3

part stock: 125355

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 1000V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.5A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 120ns,

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Vishay Semiconductor Diodes Division

BYG10KHE3_A/H

part stock: 131683

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 800V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG10DHE3_A/H

part stock: 113290

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 200V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG22AHM3_A/I

part stock: 185055

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 50V, Current - Average Rectified (Io): 2A, Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG10Y-M3/TR3

part stock: 180703

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 1600V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG21K-M3/TR3

part stock: 162491

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 800V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.5A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 120ns,

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Vishay Semiconductor Diodes Division

BYG24JHE3_A/H

part stock: 132072

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 600V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG21MHM3_A/H

part stock: 136967

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 1000V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.5A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 120ns,

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Vishay Semiconductor Diodes Division

BYG20J-M3/TR

part stock: 178639

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 600V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG24D-E3/TR3

part stock: 156019

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 200V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG23MHM3_A/I

part stock: 190141

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 1000V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG22BHM3_A/I

part stock: 171388

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 100V, Current - Average Rectified (Io): 2A, Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG22DHM3_A/I

part stock: 102534

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 200V, Current - Average Rectified (Io): 2A, Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG22B-M3/TR3

part stock: 173966

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 100V, Current - Average Rectified (Io): 2A, Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG20GHM3_A/I

part stock: 115903

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 400V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG10GHE3_A/I

part stock: 182526

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 400V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG10GHM3_A/H

part stock: 172130

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 400V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG24JHM3_A/I

part stock: 108801

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 600V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG20D-M3/TR3

part stock: 111269

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 200V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG21MHM3_A/I

part stock: 118403

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 1000V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.5A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 120ns,

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Vishay Semiconductor Diodes Division

BYG22A-M3/TR3

part stock: 119326

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 50V, Current - Average Rectified (Io): 2A, Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG10D-M3/TR

part stock: 190073

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 200V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG10D-M3/TR3

part stock: 103238

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 200V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG10K-E3/TR3

part stock: 180365

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 800V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG21M-M3/TR

part stock: 170299

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 1000V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.5A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 120ns,

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Vishay Semiconductor Diodes Division

BYG24DHE3_A/H

part stock: 116233

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 200V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG10MHM3_A/H

part stock: 112902

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 1000V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG23MHE3_A/I

part stock: 132466

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 1000V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG24G-M3/TR3

part stock: 181386

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 400V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG10GHE3_A/H

part stock: 194033

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 400V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG24JHE3_A/I

part stock: 123257

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 600V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG22A-E3/TR3

part stock: 130377

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 50V, Current - Average Rectified (Io): 2A, Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG24G-E3/TR3

part stock: 175101

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 400V, Current - Average Rectified (Io): 1.5A, Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG22BHM3_A/H

part stock: 102483

Diode Type: Avalanche, Voltage - DC Reverse (Vr) (Max): 100V, Current - Average Rectified (Io): 2A, Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25ns,

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3600

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