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Transistors - FETs, MOSFETs - Single

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SI4126DY-T1-GE3
Vishay Siliconix

SI4126DY-T1-GE3

part stock: 61700

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.75 mOhm @ 15A, 10V,

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SIR870DP-T1-GE3
Vishay Siliconix

SIR870DP-T1-GE3

part stock: 60973

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V,

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SIR826DP-T1-RE3
Vishay Siliconix

SIR826DP-T1-RE3

part stock: 7967

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V,

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SUD19N20-90-T4-E3
Vishay Siliconix

SUD19N20-90-T4-E3

part stock: 49898

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 90 mOhm @ 5A, 10V,

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SIHD7N60E-E3
Vishay Siliconix

SIHD7N60E-E3

part stock: 76161

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V,

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SI1032R-T1-GE3
Vishay Siliconix

SI1032R-T1-GE3

part stock: 195024

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 140mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V,

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SI7430DP-T1-E3
Vishay Siliconix

SI7430DP-T1-E3

part stock: 61538

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 150V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 10V,

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SUD40N10-25-E3
Vishay Siliconix

SUD40N10-25-E3

part stock: 44764

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 40A, 10V,

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SQJ457EP-T1_GE3
Vishay Siliconix

SQJ457EP-T1_GE3

part stock: 184399

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 10A, 10V,

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SI2312CDS-T1-GE3
Vishay Siliconix

SI2312CDS-T1-GE3

part stock: 162492

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 31.8 mOhm @ 5A, 4.5V,

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SI7390DP-T1-E3
Vishay Siliconix

SI7390DP-T1-E3

part stock: 57412

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V,

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SQM90142E_GE3
Vishay Siliconix

SQM90142E_GE3

part stock: 44244

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 20A, 10V,

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SIHF12N60E-GE3
Vishay Siliconix

SIHF12N60E-GE3

part stock: 50457

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V,

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SIHJ8N60E-T1-GE3
Vishay Siliconix

SIHJ8N60E-T1-GE3

part stock: 69561

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 520 mOhm @ 4A, 10V,

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SUD40151EL-GE3
Vishay Siliconix

SUD40151EL-GE3

part stock: 7913

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12 mOhm @ 17.5A, 10V,

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SI2333CDS-T1-E3
Vishay Siliconix

SI2333CDS-T1-E3

part stock: 105597

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.1A, 4.5V,

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SI2308BDS-T1-GE3
Vishay Siliconix

SI2308BDS-T1-GE3

part stock: 119268

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 156 mOhm @ 1.9A, 10V,

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SQ4401EY-T1_GE3
Vishay Siliconix

SQ4401EY-T1_GE3

part stock: 57436

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 14 mOhm @ 10.5A, 10V,

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SIR846ADP-T1-GE3
Vishay Siliconix

SIR846ADP-T1-GE3

part stock: 67682

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 20A, 10V,

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SIHU7N60E-E3
Vishay Siliconix

SIHU7N60E-E3

part stock: 74123

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V,

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SI4456DY-T1-E3
Vishay Siliconix

SI4456DY-T1-E3

part stock: 68718

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V,

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SQD90P04-9M4L_GE3
Vishay Siliconix

SQD90P04-9M4L_GE3

part stock: 60943

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 17A, 10V,

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TP0610K-T1-GE3
Vishay Siliconix

TP0610K-T1-GE3

part stock: 190872

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 185mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V,

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SIR826DP-T1-GE3
Vishay Siliconix

SIR826DP-T1-GE3

part stock: 51964

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V,

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SI4190ADY-T1-GE3
Vishay Siliconix

SI4190ADY-T1-GE3

part stock: 82342

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 15A, 10V,

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SIS413DN-T1-GE3
Vishay Siliconix

SIS413DN-T1-GE3

part stock: 136739

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 15A, 10V,

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SI2372DS-T1-GE3
Vishay Siliconix

SI2372DS-T1-GE3

part stock: 142591

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 5.3A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 33 mOhm @ 3A, 10V,

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SI7898DP-T1-GE3
Vishay Siliconix

SI7898DP-T1-GE3

part stock: 37995

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 150V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V,

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SIA400EDJ-T1-GE3
Vishay Siliconix

SIA400EDJ-T1-GE3

part stock: 108266

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 19 mOhm @ 11A, 4.5V,

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SQM40P10-40L_GE3
Vishay Siliconix

SQM40P10-40L_GE3

part stock: 8011

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 40 mOhm @ 17A, 10V,

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SI7636DP-T1-GE3
Vishay Siliconix

SI7636DP-T1-GE3

part stock: 58750

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V,

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SIDR402DP-T1-GE3
Vishay Siliconix

SIDR402DP-T1-GE3

part stock: 5860

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 0.88 mOhm @ 20A, 10V,

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SIR882DP-T1-GE3
Vishay Siliconix

SIR882DP-T1-GE3

part stock: 60907

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 20A, 10V,

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SQJ461EP-T1_GE3
Vishay Siliconix

SQJ461EP-T1_GE3

part stock: 52002

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 14.4A, 10V,

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SUM70060E-GE3
Vishay Siliconix

SUM70060E-GE3

part stock: 62874

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 131A (Tc), Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 30A, 10V,

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SQJQ404E-T1_GE3
Vishay Siliconix

SQJQ404E-T1_GE3

part stock: 8038

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.72 mOhm @ 20A, 10V,

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