Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products | 100

SIHG30N60AEL-GE3

part stock: 409

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 120 mOhm @ 15A, 10V,

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SI8824EDB-T2-E1

part stock: 113919

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Rds On (Max) @ Id, Vgs: 75 mOhm @ 1A, 4.5V,

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SIHH21N65E-T1-GE3

part stock: 21158

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 170 mOhm @ 11A, 10V,

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SIHG22N60AEL-GE3

part stock: 315

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V,

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IRFPE40PBF

part stock: 20552

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 800V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.2A, 10V,

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SI7302DN-T1-E3

part stock: 52539

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 220V, Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 320 mOhm @ 2.3A, 10V,

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SIHG73N60AEL-GE3

part stock: 294

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 69A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 42 mOhm @ 36.5A, 10V,

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SIHG25N40D-GE3

part stock: 17885

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 400V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 170 mOhm @ 13A, 10V,

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SIHP22N60EL-GE3

part stock: 394

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 197 mOhm @ 11A, 10V,

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SI1403BDL-T1-E3

part stock: 181511

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 4.5V,

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SIHW30N60E-GE3

part stock: 10407

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V,

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SIHA22N60EL-E3

part stock: 417

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 197 mOhm @ 11A, 10V,

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SI7465DP-T1-E3

part stock: 125162

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 64 mOhm @ 5A, 10V,

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IRFI640GPBF

part stock: 35980

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.9A, 10V,

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SIHG47N60AEL-GE3

part stock: 310

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 65 mOhm @ 23.5A, 10V,

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SUP70040E-GE3

part stock: 21670

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V,

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IRF9610SPBF

part stock: 34088

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 900mA, 10V,

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IRFPS43N50KPBF

part stock: 5921

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 90 mOhm @ 28A, 10V,

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SI7703EDN-T1-E3

part stock: 113237

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V,

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SI8823EDB-T2-E1

part stock: 144751

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 95 mOhm @ 1A, 4.5V,

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SI7461DP-T1-E3

part stock: 85832

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 14.4A, 10V,

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SIHH21N65EF-T1-GE3

part stock: 20518

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 19.8A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V,

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SIHP21N65EF-GE3

part stock: 15010

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V,

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SIHG21N60EF-GE3

part stock: 14828

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 176 mOhm @ 11A, 10V,

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SI7431DP-T1-GE3

part stock: 34099

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 174 mOhm @ 3.8A, 10V,

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IRFPS40N60KPBF

part stock: 4343

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 24A, 10V,

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SIHP28N60EF-GE3

part stock: 10811

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 123 mOhm @ 14A, 10V,

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SI4632DY-T1-GE3

part stock: 57393

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V,

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SI8465DB-T2-E1

part stock: 138612

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 104 mOhm @ 1.5A, 4.5V,

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SIHP18N50C-E3

part stock: 23344

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V,

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SIHG47N60AE-GE3

part stock: 8572

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 65 mOhm @ 24A, 10V,

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IRF830A

part stock: 28701

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V,

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SI8821EDB-T2-E1

part stock: 101248

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 135 mOhm @ 1A, 4.5V,

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SIHG32N50D-GE3

part stock: 12574

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 150 mOhm @ 16A, 10V,

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SUM110P06-08L-E3

part stock: 27762

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V,

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SUM55P06-19L-E3

part stock: 44430

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 19 mOhm @ 30A, 10V,

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