Transistors - FETs, MOSFETs - Single

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Transistors - FETs, MOSFETs - Single

Rohm Semiconductor

R8005ANX

part stock: 39045

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 800V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.08 Ohm @ 2.5A, 10V,

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Rohm Semiconductor

ZDX080N50

part stock: 53481

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V,

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Rohm Semiconductor

R6030ENZC8

part stock: 11919

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V,

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Rohm Semiconductor

R6076MNZ1C9

part stock: 2810

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 55 mOhm @ 38A, 10V,

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Rohm Semiconductor

R6015ANZC8

part stock: 13606

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V,

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Rohm Semiconductor

R6009KNX

part stock: 42344

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 535 mOhm @ 2.8A, 10V,

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Rohm Semiconductor

R6025FNZC8

part stock: 11910

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 12.5A, 10V,

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Rohm Semiconductor

R6046ANZ1C9

part stock: 4029

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V,

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Rohm Semiconductor

R6030KNX

part stock: 19671

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V,

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Rohm Semiconductor

R6004KNX

part stock: 45258

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 980 mOhm @ 1.5A, 10V,

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Rohm Semiconductor

RCX120N25

part stock: 30651

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 250V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V,

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Rohm Semiconductor

R6008ANX

part stock: 22432

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V,

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Rohm Semiconductor

R6006ANX

part stock: 33495

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V,

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Rohm Semiconductor

RJ1U330AAFRGTL

part stock: 4352

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 250V, Current - Continuous Drain (Id) @ 25°C: 33A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 105 mOhm @ 16.5A, 10V,

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Rohm Semiconductor

R8008ANX

part stock: 14497

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 800V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.03 Ohm @ 4A, 10V,

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Rohm Semiconductor

SCT2280KEC

part stock: 11880

FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Drain to Source Voltage (Vdss): 1200V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Drive Voltage (Max Rds On, Min Rds On): 18V, Rds On (Max) @ Id, Vgs: 364 mOhm @ 4A, 18V,

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Rohm Semiconductor

RCJ330N25TL

part stock: 52684

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 250V, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 105 mOhm @ 16.5A, 10V,

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Rohm Semiconductor

RCJ300N20TL

part stock: 52375

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V,

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Rohm Semiconductor

SCT3030KLGC11

part stock: 1719

FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Drain to Source Voltage (Vdss): 1200V, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Drive Voltage (Max Rds On, Min Rds On): 18V, Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 18V,

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Rohm Semiconductor

R6020ENZC8

part stock: 17243

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 196 mOhm @ 9.5A, 10V,

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Rohm Semiconductor

R6008FNJTL

part stock: 38434

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 950 mOhm @ 4A, 10V,

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Rohm Semiconductor

R6020ANX

part stock: 9909

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 220 mOhm @ 10A, 10V,

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Rohm Semiconductor

SCT3080KLGC11

part stock: 6742

FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Drain to Source Voltage (Vdss): 1200V, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Drive Voltage (Max Rds On, Min Rds On): 18V, Rds On (Max) @ Id, Vgs: 104 mOhm @ 10A, 18V,

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Rohm Semiconductor

RCJ700N20TL

part stock: 31722

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 42.7 mOhm @ 35A, 10V,

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Rohm Semiconductor

R6030KNZC8

part stock: 18757

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V,

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Rohm Semiconductor

RCJ510N25TL

part stock: 16425

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 250V, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 65 mOhm @ 25.5A, 10V,

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Rohm Semiconductor

RSJ10HN06TL

part stock: 21162

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V,

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Rohm Semiconductor

R5019ANJTL

part stock: 22176

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta),

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Rohm Semiconductor

SCT3160KLGC11

part stock: 11898

FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Drain to Source Voltage (Vdss): 1200V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Drive Voltage (Max Rds On, Min Rds On): 18V, Rds On (Max) @ Id, Vgs: 208 mOhm @ 5A, 18V,

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Rohm Semiconductor

RSJ400N06TL

part stock: 61300

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 40A, 10V,

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Rohm Semiconductor

RCJ050N25TL

part stock: 168812

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 250V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.36 Ohm @ 2.5A, 10V,

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Rohm Semiconductor

R5011FNJTL

part stock: 77374

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 520 mOhm @ 5.5A, 10V,

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Rohm Semiconductor

R6025FNZ1C9

part stock: 10569

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 12.5A, 10V,

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Rohm Semiconductor

RSJ800N06TL

part stock: 38742

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 80A (Ta),

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Rohm Semiconductor

RSJ250P10TL

part stock: 51305

FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 63 mOhm @ 25A, 10V,

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Rohm Semiconductor

RSJ450N04TL

part stock: 64677

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 25A, 10V,

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644

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