Transistors - FETs, MOSFETs - Arrays

QJD1210010

part stock: 2869

FET Type: 2 N-Channel (Dual), FET Feature: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 100A, 20V, Vgs(th) (Max) @ Id: 5V @ 10mA,

QJD1210SA1

part stock: 2941

FET Type: 2 N-Channel (Dual), FET Feature: Standard, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 100A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 15V, Vgs(th) (Max) @ Id: 1.6V @ 34mA,

QJD1210SA2

part stock: 2896

FET Type: 2 N-Channel (Dual), FET Feature: Standard, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 100A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 15V, Vgs(th) (Max) @ Id: 1.6V @ 34mA,

QJD1210SB1

part stock: 2931

QJD1210011

part stock: 3308

FET Type: 2 N-Channel (Dual), FET Feature: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 100A, 20V, Vgs(th) (Max) @ Id: 5V @ 10mA,