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Transistors - Bipolar (BJT) - Arrays, Pre-Biased

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PBLS1504V,115
NXP USA Inc.

PBLS1504V,115

part stock: 1472

Transistor Type: 1 NPN Pre-Biased, 1 PNP, Current - Collector (Ic) (Max): 100mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, 15V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 150 @ 100mA, 2V,

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PBLS4001V,115
NXP USA Inc.

PBLS4001V,115

part stock: 1384

Transistor Type: 1 NPN Pre-Biased, 1 PNP, Current - Collector (Ic) (Max): 100mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, 40V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V / 150 @ 100mA, 2V,

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PBLS4002V,115
NXP USA Inc.

PBLS4002V,115

part stock: 1498

Transistor Type: 1 NPN Pre-Biased, 1 PNP, Current - Collector (Ic) (Max): 100mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, 40V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 100mA, 2V,

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PBLS2003S,115
NXP USA Inc.

PBLS2003S,115

part stock: 1383

Transistor Type: 1 NPN Pre-Biased, 1 PNP, Current - Collector (Ic) (Max): 100mA, 3A, Voltage - Collector Emitter Breakdown (Max): 50V, 20V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 150 @ 2A, 2V,

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PBLS4005V,115
NXP USA Inc.

PBLS4005V,115

part stock: 1428

Transistor Type: 1 NPN Pre-Biased, 1 PNP, Current - Collector (Ic) (Max): 100mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, 40V, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 150 @ 100mA, 2V,

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PBLS4003V,115
NXP USA Inc.

PBLS4003V,115

part stock: 1458

Transistor Type: 1 NPN Pre-Biased, 1 PNP, Current - Collector (Ic) (Max): 100mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, 40V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 150 @ 100mA. 2V,

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PBLS2002S,115
NXP USA Inc.

PBLS2002S,115

part stock: 1539

Transistor Type: 1 NPN Pre-Biased, 1 PNP, Current - Collector (Ic) (Max): 100mA, 3A, Voltage - Collector Emitter Breakdown (Max): 50V, 20V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 2A, 2V,

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PBLS2001S,115
NXP USA Inc.

PBLS2001S,115

part stock: 1488

Transistor Type: 1 NPN Pre-Biased, 1 PNP, Current - Collector (Ic) (Max): 100mA, 3A, Voltage - Collector Emitter Breakdown (Max): 50V, 20V, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V / 150 @ 2A, 2V,

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PUML1,115
NXP USA Inc.

PUML1,115

part stock: 1500

Transistor Type: 1 NPN Pre-Biased, 1 NPN, Current - Collector (Ic) (Max): 100mA, 200mA, Voltage - Collector Emitter Breakdown (Max): 50V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 210 @ 2mA, 10V,

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PBLS4004V,115
NXP USA Inc.

PBLS4004V,115

part stock: 1464

Transistor Type: 1 NPN Pre-Biased, 1 PNP, Current - Collector (Ic) (Max): 100mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, 40V, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 150 @ 100mA, 2V,

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PBLS1503V,115
NXP USA Inc.

PBLS1503V,115

part stock: 1388

Transistor Type: 1 NPN Pre-Biased, 1 PNP, Current - Collector (Ic) (Max): 100mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, 15V, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 150 @ 100mA. 2V,

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PBLS1502V,115
NXP USA Inc.

PBLS1502V,115

part stock: 1399

Transistor Type: 1 NPN Pre-Biased, 1 PNP, Current - Collector (Ic) (Max): 100mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, 15V, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 100mA, 2V,

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