Transistors - Bipolar (BJT) - Arrays

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Transistors - Bipolar (BJT) - Arrays

Microsemi Corporation

JANTX2N2919L

part stock: 1721

Transistor Type: 2 NPN (Dual), Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

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Microsemi Corporation

JANTXV2N2060L

part stock: 835

Transistor Type: 2 NPN (Dual), Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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Microsemi Corporation

JANTXV2N2920L

part stock: 1532

Transistor Type: 2 NPN (Dual), Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

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Microsemi Corporation

JAN2N2920L

part stock: 1944

Transistor Type: 2 NPN (Dual), Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

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Microsemi Corporation

JANTX2N4854U

part stock: 4433

Transistor Type: NPN, PNP, Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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Microsemi Corporation

JANTX2N5796U

part stock: 4445

Transistor Type: 2 PNP (Dual), Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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Microsemi Corporation

JANS2N2920

part stock: 617

Transistor Type: 2 NPN (Dual), Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

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Microsemi Corporation

JANTXV2N6989

part stock: 1252

Transistor Type: 4 NPN (Quad), Current - Collector (Ic) (Max): 800mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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Microsemi Corporation

JANTX2N3811

part stock: 4496

Transistor Type: 2 PNP (Dual), Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

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Microsemi Corporation

JANTX2N3811L

part stock: 4476

Transistor Type: 2 PNP (Dual), Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

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Microsemi Corporation

JANTXV2N2060

part stock: 4482

Transistor Type: 2 NPN (Dual), Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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Microsemi Corporation

JANTX2N5794U

part stock: 4450

Transistor Type: 2 NPN (Dual), Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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Microsemi Corporation

SG2003J

part stock: 4422

Transistor Type: 7 NPN Darlington, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

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Microsemi Corporation

JANTXV2N3811

part stock: 4485

Transistor Type: 2 PNP (Dual), Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

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Microsemi Corporation

SG2803J-DESC

part stock: 4457

Transistor Type: 8 NPN Darlington, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

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Microsemi Corporation

JANTX2N6989

part stock: 1403

Transistor Type: 4 NPN (Quad), Current - Collector (Ic) (Max): 800mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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Microsemi Corporation

JANTX2N5794

part stock: 4465

Transistor Type: 2 NPN (Dual), Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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Microsemi Corporation

SG2023J-DESC

part stock: 4587

Transistor Type: 7 NPN Darlington, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 95V, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

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Microsemi Corporation

JANTXV2N3810U

part stock: 1474

Transistor Type: 2 PNP (Dual), Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

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Microsemi Corporation

SG2823J-883B

part stock: 4475

Transistor Type: 8 NPN Darlington, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 95V, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

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Microsemi Corporation

JANTX2N3811U

part stock: 4430

Transistor Type: 2 PNP (Dual), Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

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Microsemi Corporation

JANTX2N6989U

part stock: 4522

Transistor Type: 4 NPN (Quad), Current - Collector (Ic) (Max): 800mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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Microsemi Corporation

JANTX2N4854

part stock: 586

Transistor Type: NPN, PNP, Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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Microsemi Corporation

JAN2N6989

part stock: 1489

Transistor Type: 4 NPN (Quad), Current - Collector (Ic) (Max): 800mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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Microsemi Corporation

JANTX2N6990

part stock: 4451

Transistor Type: 4 NPN (Quad), Current - Collector (Ic) (Max): 800mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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Microsemi Corporation

SG2823J

part stock: 4440

Transistor Type: 8 NPN Darlington, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 95V, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

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Microsemi Corporation

JAN2N2920U

part stock: 1510

Transistor Type: 2 NPN (Dual), Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

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Microsemi Corporation

JANTXV2N6988

part stock: 1211

Transistor Type: 4 PNP (Quad), Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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Microsemi Corporation

JANTXV2N2919

part stock: 1627

Transistor Type: 2 NPN (Dual), Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

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Microsemi Corporation

JAN2N2919U

part stock: 1524

Transistor Type: 2 NPN (Dual), Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

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Microsemi Corporation

JANTXV2N2919U

part stock: 1139

Transistor Type: 2 NPN (Dual), Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

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Microsemi Corporation

JANTXV2N5794

part stock: 231

Transistor Type: 2 NPN (Dual), Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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Microsemi Corporation

JAN2N6990

part stock: 1554

Transistor Type: 4 NPN (Quad), Current - Collector (Ic) (Max): 800mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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Microsemi Corporation

JANTX2N3810L

part stock: 2505

Transistor Type: 2 PNP (Dual), Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

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Microsemi Corporation

JANTX2N2920L

part stock: 4518

Transistor Type: 2 NPN (Dual), Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

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Microsemi Corporation

JANTXV2N2920U

part stock: 4499

Transistor Type: 2 NPN (Dual), Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

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