Transistors - Bipolar (BJT) - RF | Discrete Semiconductor Products | 1

MAX2601ESA+T

part stock: 27552

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 15V, Frequency - Transition: 1GHz, Noise Figure (dB Typ @ f): 3.3dB @ 836MHz, Gain: 11.6dB, Power - Max: 6.4W,

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Maxim Integrated

MAX2601ESA-T

part stock: 7213

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 15V, Frequency - Transition: 1GHz, Noise Figure (dB Typ @ f): 3.3dB @ 836MHz, Gain: 11.6dB, Power - Max: 6.4W,

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Maxim Integrated

MAX2601ESA+

part stock: 17948

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 15V, Frequency - Transition: 1GHz, Noise Figure (dB Typ @ f): 3.3dB @ 836MHz, Gain: 11.6dB, Power - Max: 6.4W,

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Maxim Integrated

MAX2602ESA+

part stock: 17619

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 15V, Frequency - Transition: 1GHz, Noise Figure (dB Typ @ f): 3.3dB @ 836MHz, Gain: 11.6dB, Power - Max: 6.4W,

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Maxim Integrated

MAX2602ESA-T

part stock: 7183

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 15V, Frequency - Transition: 1GHz, Noise Figure (dB Typ @ f): 3.3dB @ 836MHz, Gain: 11.6dB, Power - Max: 6.4W,

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Maxim Integrated

MAX2602ESA+T

part stock: 27102

Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 15V, Frequency - Transition: 1GHz, Noise Figure (dB Typ @ f): 3.3dB @ 836MHz, Gain: 11.6dB, Power - Max: 6.4W,

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