Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products | 1

LSIC1MO120E0080

part stock: 1259

FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Drain to Source Voltage (Vdss): 1200V, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Drive Voltage (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V,

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Littelfuse Inc.

LSIC1MO120E0160

part stock: 1034

FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Drain to Source Voltage (Vdss): 1200V, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Drive Voltage (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 10A, 20V,

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Littelfuse Inc.

LSIC1MO120E0120

part stock: 1693

FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Drain to Source Voltage (Vdss): 1200V, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Drive Voltage (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 20V,

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