Transistors - FETs, MOSFETs - Single

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Transistors - FETs, MOSFETs - Single

Infineon Technologies

IPI09N03LA

part stock: 123

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V,

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Infineon Technologies

SPP80N04S2-04

part stock: 234

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V,

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SPB07N60S5ATMA1

Infineon Technologies

SPB07N60S5ATMA1

part stock: 236

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V,

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Infineon Technologies

IPP80N06S3-05

part stock: 156

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 63A, 10V,

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SPB100N03S2L-03 G

Infineon Technologies

SPB100N03S2L-03 G

part stock: 131

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V,

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Infineon Technologies

SPD04N50C3T

part stock: 107

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 560V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V,

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IPD35N12S3L24ATMA1

Infineon Technologies

IPD35N12S3L24ATMA1

part stock: 153927

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 120V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 24 mOhm @ 35A, 10V,

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Infineon Technologies

IPI14N03LA

part stock: 196

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 30A, 10V,

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Infineon Technologies

IPBH6N03LA G

part stock: 264

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 50A, 10V,

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Infineon Technologies

SPB21N10 G

part stock: 182

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V,

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IPP100N06S3L-04

Infineon Technologies

IPP100N06S3L-04

part stock: 190

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V,

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Infineon Technologies

IRF6635TR1PBF

part stock: 120

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 32A, 10V,

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Infineon Technologies

IRF6641TR1PBF

part stock: 262

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 59.9 mOhm @ 5.5A, 10V,

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Infineon Technologies

SN7002N E6433

part stock: 142

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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Infineon Technologies

SPD07N60C3T

part stock: 100

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V,

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IPP100N06S3L-03

Infineon Technologies

IPP100N06S3L-03

part stock: 140

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V,

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Infineon Technologies

IPS09N03LA G

part stock: 177

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 30A, 10V,

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Infineon Technologies

SPI21N10

part stock: 230

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V,

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Infineon Technologies

SPI80N04S2-04

part stock: 222

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V,

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Infineon Technologies

SPI80N06S2-08

part stock: 290

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 8 mOhm @ 58A, 10V,

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Infineon Technologies

IPU05N03LA

part stock: 135

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 30A, 10V,

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Infineon Technologies

SPI80N03S2L-05

part stock: 270

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 55A, 10V,

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SPB100N08S2L-07

Infineon Technologies

SPB100N08S2L-07

part stock: 214

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 75V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 68A, 10V,

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Infineon Technologies

SPP80N08S2-07

part stock: 221

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 75V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 66A, 10V,

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Infineon Technologies

IPP13N03LB G

part stock: 5659

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 30A, 10V,

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SPP80N06S08AKSA1

Infineon Technologies

SPP80N06S08AKSA1

part stock: 43841

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 8 mOhm @ 80A, 10V,

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Infineon Technologies

SPP100N04S2-04

part stock: 285

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 80A, 10V,

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Infineon Technologies

SPI42N03S2L-13

part stock: 249

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 21A, 10V,

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SPD02N60S5BTMA1

Infineon Technologies

SPD02N60S5BTMA1

part stock: 283

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V,

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Infineon Technologies

SPD07N20

part stock: 6086

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V,

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Infineon Technologies

SPU07N60S5

part stock: 307

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V,

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SPN02N60C3 E6433

Infineon Technologies

SPN02N60C3 E6433

part stock: 272

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.1A, 10V,

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Infineon Technologies

SPI80N08S2-07

part stock: 278

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 75V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 66A, 10V,

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SPI11N60S5BKSA1

Infineon Technologies

SPI11N60S5BKSA1

part stock: 272

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V,

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Infineon Technologies

IPS10N03LA G

part stock: 6071

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 30A, 10V,

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Infineon Technologies

SPB10N10L G

part stock: 255

FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 154 mOhm @ 8.1A, 10V,

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3600

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