Diodes - Bridge Rectifiers | Discrete Semiconductor Products | 1

GHXS010A060S-D1

part stock: 2081

Diode Type: Single Phase, Technology: Silicon Carbide Schottky, Voltage - Peak Reverse (Max): 600V, Current - Average Rectified (Io): 10A, Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A, Current - Reverse Leakage @ Vr: 100µA @ 600V,

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Global Power Technologies Group

GHXS045A120S-D1

part stock: 537

Diode Type: Single Phase, Technology: Silicon Carbide Schottky, Voltage - Peak Reverse (Max): 1.2kV, Current - Average Rectified (Io): 45A, Voltage - Forward (Vf) (Max) @ If: 1.7V @ 45A, Current - Reverse Leakage @ Vr: 300µA @ 1200V,

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Global Power Technologies Group

GHXS045A120S-D1E

part stock: 534

Diode Type: Single Phase, Technology: Silicon Carbide Schottky, Voltage - Peak Reverse (Max): 1.2kV, Current - Average Rectified (Io): 45A, Voltage - Forward (Vf) (Max) @ If: 1.7V @ 45A, Current - Reverse Leakage @ Vr: 300µA @ 1200V,

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Global Power Technologies Group

GHXS015A120S-D1E

part stock: 1190

Diode Type: Single Phase, Technology: Silicon Carbide Schottky, Voltage - Peak Reverse (Max): 1.2kV, Current - Average Rectified (Io): 15A, Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A, Current - Reverse Leakage @ Vr: 100µA @ 1200V,

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Global Power Technologies Group

GHXS015A120S-D1

part stock: 1154

Diode Type: Single Phase, Technology: Silicon Carbide Schottky, Voltage - Peak Reverse (Max): 1.2kV, Current - Average Rectified (Io): 15A, Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A, Current - Reverse Leakage @ Vr: 100µA @ 1200V,

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Global Power Technologies Group

GHXS020A060S-D1

part stock: 1478

Diode Type: Single Phase, Technology: Silicon Carbide Schottky, Voltage - Peak Reverse (Max): 600V, Current - Average Rectified (Io): 20A, Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A, Current - Reverse Leakage @ Vr: 200µA @ 600V,

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Global Power Technologies Group

GHXS030A060S-D1

part stock: 1214

Diode Type: Single Phase, Technology: Silicon Carbide Schottky, Voltage - Peak Reverse (Max): 600V, Current - Average Rectified (Io): 30A, Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A, Current - Reverse Leakage @ Vr: 100µA @ 600V,

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Global Power Technologies Group

GHXS030A120S-D1

part stock: 658

Diode Type: Single Phase, Technology: Silicon Carbide Schottky, Voltage - Peak Reverse (Max): 1.2kV, Current - Average Rectified (Io): 30A, Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A, Current - Reverse Leakage @ Vr: 200µA @ 1200V,

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Global Power Technologies Group

GHXS030A120S-D1E

part stock: 720

Diode Type: Single Phase, Technology: Silicon Carbide Schottky, Voltage - Peak Reverse (Max): 1.2kV, Current - Average Rectified (Io): 30A, Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A, Current - Reverse Leakage @ Vr: 200µA @ 1200V,

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Global Power Technologies Group

GHXS020A060S-D1E

part stock: 1471

Diode Type: Single Phase, Technology: Silicon Carbide Schottky, Voltage - Peak Reverse (Max): 600V, Current - Average Rectified (Io): 20A, Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A, Current - Reverse Leakage @ Vr: 200µA @ 600V,

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Global Power Technologies Group

GHXS010A060S-D1E

part stock: 2062

Diode Type: Single Phase, Technology: Silicon Carbide Schottky, Voltage - Peak Reverse (Max): 600V, Current - Average Rectified (Io): 10A, Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A, Current - Reverse Leakage @ Vr: 100µA @ 600V,

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Global Power Technologies Group

GHXS030A060S-D1E

part stock: 1161

Diode Type: Single Phase, Technology: Silicon Carbide Schottky, Voltage - Peak Reverse (Max): 600V, Current - Average Rectified (Io): 30A, Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A, Current - Reverse Leakage @ Vr: 100µA @ 600V,

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