Transistors - FETs, MOSFETs - Single

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Transistors - FETs, MOSFETs - Single

EPC2001

part stock: 18487

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V,

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EPC2049ENGRT

part stock: 4397

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 5 mOhm @ 15A, 5V,

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EPC2021

part stock: 14286

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 90A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 29A, 5V,

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EPC2025

part stock: 1945

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 300V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 150 mOhm @ 3A, 5V,

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EPC2031

part stock: 8638

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 5V,

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EPC2018

part stock: 8926

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 150V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V,

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EPC2016

part stock: 50068

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 11A, 5V,

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EPC2051ENGRT

part stock: 10801

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 1.7A, Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 5V,

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EPC8004

part stock: 28614

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 110 mOhm @ 500mA, 5V,

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EPC8009

part stock: 27880

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 65V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 500mA, 5V,

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EPC2030ENGRT

part stock: 16295

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 30A, 5V,

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EPC2007

part stock: 69589

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 5V,

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EPC2015

part stock: 18703

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 33A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V,

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EPC2031ENGRT

part stock: 17048

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 5V,

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EPC2012

part stock: 54098

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V,

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EPC2010

part stock: 9929

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V,

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EPC2022

part stock: 14027

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 25A, 5V,

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EPC2024

part stock: 14687

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 37A, 5V,

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EPC2033

part stock: 13722

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 150V, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V,

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EPC2032

part stock: 16483

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 48A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 5V,

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EPC2020

part stock: 14515

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 90A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 31A, 5V,

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EPC2029

part stock: 16856

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 48A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 5V,

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EPC2034

part stock: 7981

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 48A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 5V,

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EPC2035

part stock: 195456

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 45 mOhm @ 1A, 5V,

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EPC2023

part stock: 18953

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 40A, 5V,

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EPC2015C

part stock: 30169

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 53A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V,

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EPC2014

part stock: 74091

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 5V,

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EPC2030

part stock: 22960

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 30A, 5V,

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EPC8010

part stock: 46864

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 5V,

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EPC2045ENGRT

part stock: 26260

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 5V,

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EPC2010C

part stock: 17919

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 5V,

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EPC2012C

part stock: 54040

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V,

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EPC2001C

part stock: 31126

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V,

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EPC2202

part stock: 48425

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 18A, Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 17 mOhm @ 11A, 5V,

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EPC2019

part stock: 37744

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 5V,

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EPC2007C

part stock: 74756

FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 5V,

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